Effect of Ag buffer layer to ultrathin Co films on Si(lll) surface

J. S. Tsay*, Y. D. Yao, Y. Lion, S. F. Lee, C. S. Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The magnetic' properties of ultrathin Co/Ag/Si(1ll) films were studied by surface magneto-optic Kerr effect. A magnetic phase diagram for binary-metal Co/Ag films deposited on Si(lll) surfaces has been successfully established. The phase diagram can be divided into four regions: nonfcrromagnetic Co-Si compound; low Curie temperature Co film; canted out-of-plane anisotropy; in-plane anisotropy. The ferromagnetic inactive layers at the Co/Si interface are formed due to intermixing of Co and Si; and can be efficiently reduced by the Ag buffer layer. We have demonstrated that the inactive layer thickness is reduced from 2.1 ML for Co/Si(lll) to 1.0 for Co/2.8MLAg/Si(lll), and 0.0 for Co/5.6MLAg/Si(lll).

Original languageEnglish
Pages (from-to)3028-3030
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number5 PART 1
Publication statusPublished - 1999
Externally publishedYes


  • Cobalt
  • Magneto-optic kerr effect
  • Ultrathin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Effect of Ag buffer layer to ultrathin Co films on Si(lll) surface'. Together they form a unique fingerprint.

Cite this