Effect of Ag buffer layer to ultrathin Co films on Si(111) surface

J. S. Tsay*, Y. D. Yao, Y. Liou, S. F. Lee, C. S. Yang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


Ultrathin Co films were deposited on Si(111) surface. These films always exhibited a canted out-of-plane easy axis of magnetization. Experimentally, it was shown that the in-plane magnetization for ultrathin Co films can be obtained by using few-ML-thickness Ag as a buffer layer. The ferromagnetic inactive layers at the interface formed due to intermixing of Co and Si.

Original languageEnglish
Pages (from-to)FP-06
JournalDigests of the Intermag Conference
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea
Duration: 1999 May 181999 May 21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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