Effect of Ag buffer layer to ultrathin Co films on Si(111) surface

Jyh-Shen Tsay, Y. D. Yao, Y. Liou, S. F. Lee, C. S. Yang

Research output: Contribution to journalConference article

Abstract

Ultrathin Co films were deposited on Si(111) surface. These films always exhibited a canted out-of-plane easy axis of magnetization. Experimentally, it was shown that the in-plane magnetization for ultrathin Co films can be obtained by using few-ML-thickness Ag as a buffer layer. The ferromagnetic inactive layers at the interface formed due to intermixing of Co and Si.

Original languageEnglish
JournalDigests of the Intermag Conference
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 IEEE International Magnetics Conference 'Digest of Intermag 99' - Kyongju, South Korea
Duration: 1999 May 181999 May 21

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Buffer layers
Magnetization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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Effect of Ag buffer layer to ultrathin Co films on Si(111) surface. / Tsay, Jyh-Shen; Yao, Y. D.; Liou, Y.; Lee, S. F.; Yang, C. S.

In: Digests of the Intermag Conference, 01.12.1999.

Research output: Contribution to journalConference article

@article{b2afe16716f84be79054b4e7d910b239,
title = "Effect of Ag buffer layer to ultrathin Co films on Si(111) surface",
abstract = "Ultrathin Co films were deposited on Si(111) surface. These films always exhibited a canted out-of-plane easy axis of magnetization. Experimentally, it was shown that the in-plane magnetization for ultrathin Co films can be obtained by using few-ML-thickness Ag as a buffer layer. The ferromagnetic inactive layers at the interface formed due to intermixing of Co and Si.",
author = "Jyh-Shen Tsay and Yao, {Y. D.} and Y. Liou and Lee, {S. F.} and Yang, {C. S.}",
year = "1999",
month = "12",
day = "1",
language = "English",
journal = "Digests of the Intermag Conference",
issn = "0074-6843",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Effect of Ag buffer layer to ultrathin Co films on Si(111) surface

AU - Tsay, Jyh-Shen

AU - Yao, Y. D.

AU - Liou, Y.

AU - Lee, S. F.

AU - Yang, C. S.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Ultrathin Co films were deposited on Si(111) surface. These films always exhibited a canted out-of-plane easy axis of magnetization. Experimentally, it was shown that the in-plane magnetization for ultrathin Co films can be obtained by using few-ML-thickness Ag as a buffer layer. The ferromagnetic inactive layers at the interface formed due to intermixing of Co and Si.

AB - Ultrathin Co films were deposited on Si(111) surface. These films always exhibited a canted out-of-plane easy axis of magnetization. Experimentally, it was shown that the in-plane magnetization for ultrathin Co films can be obtained by using few-ML-thickness Ag as a buffer layer. The ferromagnetic inactive layers at the interface formed due to intermixing of Co and Si.

UR - http://www.scopus.com/inward/record.url?scp=0033298204&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033298204&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033298204

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

SN - 0074-6843

ER -