Dynamic Behaviors and Training Effects in TiN/Ti/HfOx/TiN-Nanolayered Memristors with Controllable Quantized Conductance States: Implications for Quantum and Neuromorphic Computing Devices

Min Hsuan Peng, Ching Yang Pan, Hao Xuan Zheng, Ting Chang Chang, Pei Hsun Jiang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Controllable quantized conductance states of TiN/Ti/HfOx/TiN memristors are realized with great precision through a pulse-mode reset procedure, assisted with analytical differentiation of the conditions of the set procedure, which involves critical monitoring of the measured bias voltage. An intriguing training effect that leads to faster switching of the states is also observed during the operation. Detailed analyses of the low- and high-resistance states under different compliance currents reveal a complete picture of the structural evolution and dynamic behaviors of the conductive filament in the HfOx layer. This study provides a closer inspection on the quantum-level manipulation of nanoscale atomic configurations in the memristors, which helps to develop essential knowledge about the design and fabrication of the future memristor-based quantum devices and neuromorphic computing devices.

Original languageEnglish
Pages (from-to)11296-11304
Number of pages9
JournalACS Applied Nano Materials
Volume4
Issue number10
DOIs
Publication statusPublished - 2021 Oct 22

Keywords

  • HfO
  • conductance quantization
  • filament
  • memristor
  • oxygen vacancy
  • resistive random-access memory (RRAM)
  • resistive switching
  • training effect

ASJC Scopus subject areas

  • General Materials Science

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