Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

Chun Yu Lin; Ming Dou Ker

doi:10.1109/ICSICT.2010.5667382

Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

Chun Yu Lin^*, Ming Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	707-709
Number of pages	3
DOIs	https://doi.org/10.1109/ICSICT.2010.5667382
Publication status	Published - 2010
Externally published	Yes
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 2010 Nov 1 → 2010 Nov 4

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	2010/11/01 → 2010/11/04

Keywords

Electrostatic discharges (ESD)
Radio-frequency integrated circuit (RF IC)
Silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2010.5667382

Cite this

Lin, C. Y., & Ker, M. D. (2010). Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 707-709). Article 5667382 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667382

Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. / Lin, Chun Yu; Ker, Ming Dou.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 707-709 5667382 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, CY & Ker, MD 2010, Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667382, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 707-709, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 2010/11/01. https://doi.org/10.1109/ICSICT.2010.5667382

Lin CY, Ker MD. Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 707-709. 5667382. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667382

Lin, Chun Yu ; Ker, Ming Dou. / Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 707-709 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

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title = "Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits",

abstract = "Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.",

keywords = "Electrostatic discharges (ESD), Radio-frequency integrated circuit (RF IC), Silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Ker, {Ming Dou}",

year = "2010",

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note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

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AU - Lin, Chun Yu

AU - Ker, Ming Dou

PY - 2010

Y1 - 2010

N2 - Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

AB - Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

KW - Electrostatic discharges (ESD)

KW - Radio-frequency integrated circuit (RF IC)

KW - Silicon-controlled rectifier (SCR)

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Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

Abstract

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Keywords

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