Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

Chun Yu Lin, Ming Dou Ker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages707-709
Number of pages3
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2010 Nov 12010 Nov 4

Publication series

NameICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period10/11/110/11/4

Fingerprint

Electrostatic discharge
Thyristors
Integrated circuits
Capacitance
Electric potential

Keywords

  • Electrostatic discharges (ESD)
  • Radio-frequency integrated circuit (RF IC)
  • Silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Lin, C. Y., & Ker, M. D. (2010). Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 707-709). [5667382] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667382

Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. / Lin, Chun Yu; Ker, Ming Dou.

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 707-709 5667382 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lin, CY & Ker, MD 2010, Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667382, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 707-709, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 10/11/1. https://doi.org/10.1109/ICSICT.2010.5667382
Lin CY, Ker MD. Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 707-709. 5667382. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667382
Lin, Chun Yu ; Ker, Ming Dou. / Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 707-709 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).
@inproceedings{3de81095c1b74d9f963ca870b62428fc,
title = "Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits",
abstract = "Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.",
keywords = "Electrostatic discharges (ESD), Radio-frequency integrated circuit (RF IC), Silicon-controlled rectifier (SCR)",
author = "Lin, {Chun Yu} and Ker, {Ming Dou}",
year = "2010",
month = "12",
day = "1",
doi = "10.1109/ICSICT.2010.5667382",
language = "English",
isbn = "9781424457984",
series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",
pages = "707--709",
booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

}

TY - GEN

T1 - Dual SCR with low-and-constant parasitic capacitance for ESD protection in 5-GHz RF integrated circuits

AU - Lin, Chun Yu

AU - Ker, Ming Dou

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

AB - Silicon-controlled rectifier (SCR) had been reported with good electrostatic discharge (ESD) robustness and low parasitic capacitance. In this work, SCR devices were investigated to have low and constant capacitance for on-chip ESD protection in RF ICs. The test devices had been verified in a 65-nm fully-silicided CMOS process. The SCR devices can pass 8-kV human-body-model (HBM) ESD tests, and the parasitic capacitance at 5 GHz kept at ∼135 fF with only 3-fF variation as the input voltage swung from VSS to VDD. Thus, the ESD protection design with SCR devices is very suitable for RF ESD applications.

KW - Electrostatic discharges (ESD)

KW - Radio-frequency integrated circuit (RF IC)

KW - Silicon-controlled rectifier (SCR)

UR - http://www.scopus.com/inward/record.url?scp=78751479209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78751479209&partnerID=8YFLogxK

U2 - 10.1109/ICSICT.2010.5667382

DO - 10.1109/ICSICT.2010.5667382

M3 - Conference contribution

AN - SCOPUS:78751479209

SN - 9781424457984

T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 707

EP - 709

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

ER -