Dual-mode operation of 2D material-base hot electron transistors

Yann Wen Lan*, Carlos M. Torres, Xiaodan Zhu, Hussam Qasem, James R. Adleman, Mitchell B. Lerner, Shin Hung Tsai, Yumeng Shi, Lain Jong Li, Wen Kuan Yeh, Kang L. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS 2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V CB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS 2 in the base region) with the application of a negative collector-base potential (V CB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of V CB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying V CB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.

Original languageEnglish
Article number32503
JournalScientific reports
Publication statusPublished - 2016 Sept 1
Externally publishedYes

ASJC Scopus subject areas

  • General


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