Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf1-xZrxO2FET

C. Y. Liao, K. Y. Hsiang, Z. F. Lou, C. Y. Lin, W. C. Ray, F. S. Chang, C. C. Wang, Z. X. Li, H. C. Tseng, J. Y. Lee, P. H. Chen, J. H. Tsai, P. G. Chen*, M. H. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fingerprint

Dive into the research topics of 'Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf1-xZrxO2FET'. Together they form a unique fingerprint.

INIS

Material Science