Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf1-xZrxO2FET

C. Y. Liao; K. Y. Hsiang; Z. F. Lou; C. Y. Lin; W. C. Ray; F. S. Chang; C. C. Wang; Z. X. Li; H. C. Tseng; J. Y. Lee; P. H. Chen; J. H. Tsai; P. G. Chen; M. H. Lee

doi:10.1109/SNW56633.2022.9889059

Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf_1-xZr_xO₂FET

C. Y. Liao, K. Y. Hsiang, Z. F. Lou, C. Y. Lin, W. C. Ray, F. S. Chang, C. C. Wang, Z. X. Li, H. C. Tseng, J. Y. Lee, P. H. Chen, J. H. Tsai, P. G. Chen^*, M. H. Lee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The dual-mode (D-mode & E-mode) GaN MOS-HEMT is achieved simultaneously by a Cascode configuration with Si ferroelectric (FE) FET. Due to hole absence in 2DEG of GaN HEMT, the conventional FE-gate stack on GaN is difficult to obtain FE-hysteresis with dipole switching in FE-layer. The proposed method is a solution to accomplish ferroelectric hysteresis for modulated modes of GaN-FET.

Original language	English
Title of host publication	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665459792
DOIs	https://doi.org/10.1109/SNW56633.2022.9889059
Publication status	Published - 2022
Event	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 - Honolulu, United States Duration: 2022 Jun 11 → 2022 Jun 12

Publication series

Name	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

Conference

Conference	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
Country/Territory	United States
City	Honolulu
Period	2022/06/11 → 2022/06/12

Keywords

Cascode
E-mode
Ferroelectric
GaN HEMT

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/SNW56633.2022.9889059

Cite this

Liao, C. Y., Hsiang, K. Y., Lou, Z. F., Lin, C. Y., Ray, W. C., Chang, F. S., Wang, C. C., Li, Z. X., Tseng, H. C., Lee, J. Y., Chen, P. H., Tsai, J. H., Chen, P. G., & Lee, M. H. (2022). Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf_1-xZr_xO₂FET. In 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 (2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW56633.2022.9889059

Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf_1-xZr_xO₂FET. / Liao, C. Y.; Hsiang, K. Y.; Lou, Z. F. et al.
2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liao, CY, Hsiang, KY, Lou, ZF, Lin, CY, Ray, WC, Chang, FS, Wang, CC, Li, ZX, Tseng, HC, Lee, JY, Chen, PH, Tsai, JH, Chen, PG & Lee, MH 2022, Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf_1-xZr_xO₂FET. in 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022. 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022, Honolulu, United States, 2022/06/11. https://doi.org/10.1109/SNW56633.2022.9889059

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title = "Dual-Mode GaN MOS-HEMT of Cascode Configuration with Si Ferroelectric Hf1-xZrxO2FET",

abstract = "The dual-mode (D-mode & E-mode) GaN MOS-HEMT is achieved simultaneously by a Cascode configuration with Si ferroelectric (FE) FET. Due to hole absence in 2DEG of GaN HEMT, the conventional FE-gate stack on GaN is difficult to obtain FE-hysteresis with dipole switching in FE-layer. The proposed method is a solution to accomplish ferroelectric hysteresis for modulated modes of GaN-FET.",

keywords = "Cascode, E-mode, Ferroelectric, GaN HEMT",

author = "Liao, {C. Y.} and Hsiang, {K. Y.} and Lou, {Z. F.} and Lin, {C. Y.} and Ray, {W. C.} and Chang, {F. S.} and Wang, {C. C.} and Li, {Z. X.} and Tseng, {H. C.} and Lee, {J. Y.} and Chen, {P. H.} and Tsai, {J. H.} and Chen, {P. G.} and Lee, {M. H.}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 ; Conference date: 11-06-2022 Through 12-06-2022",

year = "2022",

doi = "10.1109/SNW56633.2022.9889059",

language = "English",

series = "2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Lou, Z. F.

AU - Lin, C. Y.

AU - Ray, W. C.

AU - Chang, F. S.

AU - Wang, C. C.

AU - Li, Z. X.

AU - Tseng, H. C.

AU - Lee, J. Y.

AU - Chen, P. H.

AU - Tsai, J. H.

AU - Chen, P. G.

AU - Lee, M. H.

PY - 2022

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N2 - The dual-mode (D-mode & E-mode) GaN MOS-HEMT is achieved simultaneously by a Cascode configuration with Si ferroelectric (FE) FET. Due to hole absence in 2DEG of GaN HEMT, the conventional FE-gate stack on GaN is difficult to obtain FE-hysteresis with dipole switching in FE-layer. The proposed method is a solution to accomplish ferroelectric hysteresis for modulated modes of GaN-FET.

AB - The dual-mode (D-mode & E-mode) GaN MOS-HEMT is achieved simultaneously by a Cascode configuration with Si ferroelectric (FE) FET. Due to hole absence in 2DEG of GaN HEMT, the conventional FE-gate stack on GaN is difficult to obtain FE-hysteresis with dipole switching in FE-layer. The proposed method is a solution to accomplish ferroelectric hysteresis for modulated modes of GaN-FET.

KW - Cascode

KW - E-mode

KW - Ferroelectric

KW - GaN HEMT

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BT - 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

PB - Institute of Electrical and Electronics Engineers Inc.

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