Dual-mode frequency multiplier in graphene-base hot electron transistor

Bor Wei Liang, Min Fang Li, Hung Yu Lin, Kai Shin Li, Jyun Hong Chen, Jia Min Shieh, Chien Ting Wu, Kristan Bryan Simbulan, Ching Yuan Su, Chieh Hsiung Kuan, Yann Wen Lan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Since quantum computers have been gradually introduced in countries around the world, the development of the many related quantum components that can operate independently of temperature has become more important for enabling mature products with low power dissipation and high efficiency. As an alternative to studying cryo-CMOSs (complementary metal-oxide-semiconductors) to achieve this goal, quantum tunneling devices based on 2D materials can be examined instead. In this work, a vertical graphene-based quantum tunneling transistor has been used as a frequency modulator. The transistor can operate via different quantum tunneling mechanisms and generates, by applying the appropriate bias, voltage-resistance curves characteristic of variable nonlinear resistance for both base and emitter voltages. We experimentally demonstrate frequency modulation from input signals over the range of 100 kHz to 10 MHz, enabling a tunable frequency doubler or tripler in just a single transistor. This frequency multiplication with a tunneling mechanism makes the graphene-based tunneling device a promising option for frequency electronics in the emerging field of quantum technologies.

Original languageEnglish
Pages (from-to)2586-2594
Number of pages9
Issue number6
Publication statusPublished - 2023 Jan 2

ASJC Scopus subject areas

  • General Materials Science


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