Driving current enhancement of strained Ge (110) p-type tunnel FETs and anisotropic effect

M. H. Lee*, S. T. Chang, T. H. Wu, W. N. Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of ×2.9 BTBT in the 112 direction, as compared with Si 110/(100) due to a small band gap. In addition, the high on/off current ratio, with an on current ∼1 μA/μm and an off current ∼ 10 pA/μm, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.

Original languageEnglish
Article number6012507
Pages (from-to)1355-1357
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number10
DOIs
Publication statusPublished - 2011 Oct

Keywords

  • Effective mass
  • subthreshold swing
  • tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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