Abstract
The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of ×2.9 BTBT in the 112 direction, as compared with Si 110/(100) due to a small band gap. In addition, the high on/off current ratio, with an on current ∼1 μA/μm and an off current ∼ 10 pA/μm, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.
Original language | English |
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Article number | 6012507 |
Pages (from-to) | 1355-1357 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2011 Oct |
Keywords
- Effective mass
- subthreshold swing
- tunneling
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering