Driving current enhancement of strained Ge (110) p-type tunnel FETs and anisotropic effect

M. H. Lee; S. T. Chang; T. H. Wu; W. N. Tseng

doi:10.1109/LED.2011.2163379

Driving current enhancement of strained Ge (110) p-type tunnel FETs and anisotropic effect

M. H. Lee^*, S. T. Chang, T. H. Wu, W. N. Tseng

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of ×2.9 BTBT in the 112 direction, as compared with Si 110/(100) due to a small band gap. In addition, the high on/off current ratio, with an on current ∼1 μA/μm and an off current ∼ 10 pA/μm, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.

Original language	English
Article number	6012507
Pages (from-to)	1355-1357
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	10
DOIs	https://doi.org/10.1109/LED.2011.2163379
Publication status	Published - 2011 Oct

Keywords

Effective mass
subthreshold swing
tunneling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2163379

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title = "Driving current enhancement of strained Ge (110) p-type tunnel FETs and anisotropic effect",

abstract = "The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of ×2.9 BTBT in the 112 direction, as compared with Si 110/(100) due to a small band gap. In addition, the high on/off current ratio, with an on current ∼1 μA/μm and an off current ∼ 10 pA/μm, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.",

keywords = "Effective mass, subthreshold swing, tunneling",

author = "Lee, {M. H.} and Chang, {S. T.} and Wu, {T. H.} and Tseng, {W. N.}",

note = "Funding Information: Manuscript received June 9, 2011; revised July 21, 2011; accepted July 22, 2011. Date of publication September 7, 2011; date of current version September 28, 2011. This work was supported by the National Science Council under Grant NSC 98-2221-E-003-020-MY3. The review of this letter was arranged by Editor C. Bulucea.",

year = "2011",

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doi = "10.1109/LED.2011.2163379",

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volume = "32",

pages = "1355--1357",

journal = "IEEE Electron Device Letters",

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AU - Lee, M. H.

AU - Chang, S. T.

AU - Wu, T. H.

AU - Tseng, W. N.

N1 - Funding Information: Manuscript received June 9, 2011; revised July 21, 2011; accepted July 22, 2011. Date of publication September 7, 2011; date of current version September 28, 2011. This work was supported by the National Science Council under Grant NSC 98-2221-E-003-020-MY3. The review of this letter was arranged by Editor C. Bulucea.

PY - 2011/10

Y1 - 2011/10

N2 - The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of ×2.9 BTBT in the 112 direction, as compared with Si 110/(100) due to a small band gap. In addition, the high on/off current ratio, with an on current ∼1 μA/μm and an off current ∼ 10 pA/μm, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.

AB - The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of ×2.9 BTBT in the 112 direction, as compared with Si 110/(100) due to a small band gap. In addition, the high on/off current ratio, with an on current ∼1 μA/μm and an off current ∼ 10 pA/μm, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.

KW - Effective mass

KW - subthreshold swing

KW - tunneling

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JF - IEEE Electron Device Letters

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Driving current enhancement of strained Ge (110) p-type tunnel FETs and anisotropic effect

Abstract

Keywords

ASJC Scopus subject areas

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