Driving current enhancement of strained Ge (110) p-type tunnel FETs and anisotropic effect

Min-Hung Lee, S. T. Chang, T. H. Wu, W. N. Tseng

    Research output: Contribution to journalArticle

    25 Citations (Scopus)

    Abstract

    The experimental investigation carried out the strained Ge (110) p-type tunneling field-effect transistor, and it resulted in the current enhancement of ×2.9 BTBT in the 112 direction, as compared with Si 110/(100) due to a small band gap. In addition, the high on/off current ratio, with an on current ∼1 μA/μm and an off current ∼ 10 pA/μm, and the well control for leakage current without SOI substrate were obtained. The anisotropic effect of tunneling directions for strained Ge on (110) orientation was discussed and explained as due to effective reduced mass.

    Original languageEnglish
    Article number6012507
    Pages (from-to)1355-1357
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume32
    Issue number10
    DOIs
    Publication statusPublished - 2011 Oct 1

    Fingerprint

    Field effect transistors
    Leakage currents
    Tunnels
    Energy gap
    Substrates
    Direction compound

    Keywords

    • Effective mass
    • subthreshold swing
    • tunneling

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Driving current enhancement of strained Ge (110) p-type tunnel FETs and anisotropic effect. / Lee, Min-Hung; Chang, S. T.; Wu, T. H.; Tseng, W. N.

    In: IEEE Electron Device Letters, Vol. 32, No. 10, 6012507, 01.10.2011, p. 1355-1357.

    Research output: Contribution to journalArticle

    Lee, Min-Hung ; Chang, S. T. ; Wu, T. H. ; Tseng, W. N. / Driving current enhancement of strained Ge (110) p-type tunnel FETs and anisotropic effect. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 10. pp. 1355-1357.
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