Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

K. T. Chen, C. Lo, Y. Y. Lin, C. Y. Chueh, C. Chang, G. Y. Siang, Y. Y. Tseng, Y. J. Yang, F. C. Hsieh, S. H. Chang, H. Liang, S. H. Chiang, J. H. Liu, Y. Y. Lin, P. C. Yeh, C. Y. Wang, H. Y. Yang, P. J. Tzeng, M. H. Liao, S. T. ChangY. Y. Tseng, M. H. Lee*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

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Engineering & Materials Science