@inproceedings{9beaf77d422b4f1095bfcba531743891,
title = "Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory",
abstract = "The 3D double layer Ω-type FETs with ferroelectric HfZrO2 gate served for one-transistor (1T) architecture is demonstrated and studied for memory reliability. The high endurance is presented more than 106 cycles P/E with 4V. Multi-domain model integrated with TCAD is proposed by adding a coupling coefficient for the polarization gradient term of the free energy, and calculating for nanosheet GAA-FETs. The polarization orientation is assigned randomly by Gaussian distribution into individual domain for multi-dimensional 3D device simulation. The data retention is degraded due to depolarization field occurrence at the corner by modeling results. The feasible structure paves the candidate for emerging memory applications.",
keywords = "Ferroelectric, HfZrO, Omega",
author = "Chen, {K. T.} and C. Lo and Lin, {Y. Y.} and Chueh, {C. Y.} and C. Chang and Siang, {G. Y.} and Tseng, {Y. J.} and Yang, {Y. J.} and Hsieh, {F. C.} and Chang, {S. H.} and H. Liang and Chiang, {S. H.} and Liu, {J. H.} and Lin, {Y. D.} and Yeh, {P. C.} and Wang, {C. Y.} and Yang, {H. Y.} and Tzeng, {P. J.} and Liao, {M. H.} and Chang, {S. T.} and Tseng, {Y. Y.} and Lee, {M. H.}",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference date: 28-04-2020 Through 30-05-2020",
year = "2020",
month = apr,
doi = "10.1109/IRPS45951.2020.9129088",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings",
}