Double Layers Omega FETs with Ferroelectric HfZrO2 for One-Transistor Memory

K. T. Chen, C. Lo, Y. Y. Lin, C. Y. Chueh, C. Chang, G. Y. Siang, Y. Y. Tseng, Y. J. Yang, F. C. Hsieh, S. H. Chang, H. Liang, S. H. Chiang, J. H. Liu, Y. Y. Lin, P. C. Yeh, C. Y. Wang, H. Y. Yang, P. J. Tzeng, M. H. Liao, S. T. ChangY. Y. Tseng, M. H. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


The 3D double layer Ω-type FETs with ferroelectric HfZrO2 gate served for one-transistor (1T) architecture is demonstrated and studied for memory reliability. The high endurance is presented more than 106 cycles P/E with 4V. Multi-domain model integrated with TCAD is proposed by adding a coupling coefficient for the polarization gradient term of the free energy, and calculating for nanosheet GAA-FETs. The polarization orientation is assigned randomly by Gaussian distribution into individual domain for multi-dimensional 3D device simulation. The data retention is degraded due to depolarization field occurrence at the corner by modeling results. The feasible structure paves the candidate for emerging memory applications.

Original languageEnglish
Title of host publication2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728131993
Publication statusPublished - 2020 Apr
Event2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, United States
Duration: 2020 Apr 282020 May 30

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026


Conference2020 IEEE International Reliability Physics Symposium, IRPS 2020
Country/TerritoryUnited States
CityVirtual, Online


  • Ferroelectric
  • HfZrO
  • Omega

ASJC Scopus subject areas

  • Engineering(all)


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