Doping effects on the Raman spectra of silicon nanowires

Chao Yu Meng; Jui Lin Chen; Si Chen Lee; Chih Ta Chia

doi:10.1103/PhysRevB.73.245309

Doping effects on the Raman spectra of silicon nanowires

Chao Yu Meng^*
, Jui Lin Chen
, Si Chen Lee
, Chih Ta Chia

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Un-doped, N -type, and P -type doped silicon nanowires (SiNWs) were grown at 460°C and 25 Torr via the vapor-liquid-solid (VLS) mechanism. The intensity ratio of anti-Stokes/Stokes (IAS IS) peaks is used as an index of the sample temperature. Different SiNWs exhibit different Raman frequency shifts because their compressive stresses due to heating differ. The slopes of the IAS IS peak ratio versus the Raman frequency for boron-doped, un-doped, phosphorous-doped SiNWs, and bulk Si are -0.078, -0.036, -0.035 and -0.02 per cm-1, respectively. The different slopes reveal the different heating-induced compressive stresses in the SiNWs with different dopants and bulk Si.

Original language	English
Article number	245309
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	73
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.73.245309
Publication status	Published - 2006

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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@article{c7715745c6664f008c3993e8ba0ad6f7,

title = "Doping effects on the Raman spectra of silicon nanowires",

abstract = "Un-doped, N -type, and P -type doped silicon nanowires (SiNWs) were grown at 460°C and 25 Torr via the vapor-liquid-solid (VLS) mechanism. The intensity ratio of anti-Stokes/Stokes (IAS IS) peaks is used as an index of the sample temperature. Different SiNWs exhibit different Raman frequency shifts because their compressive stresses due to heating differ. The slopes of the IAS IS peak ratio versus the Raman frequency for boron-doped, un-doped, phosphorous-doped SiNWs, and bulk Si are -0.078, -0.036, -0.035 and -0.02 per cm-1, respectively. The different slopes reveal the different heating-induced compressive stresses in the SiNWs with different dopants and bulk Si.",

author = "Meng, \{Chao Yu\} and Chen, \{Jui Lin\} and Lee, \{Si Chen\} and Chia, \{Chih Ta\}",

year = "2006",

doi = "10.1103/PhysRevB.73.245309",

language = "English",

volume = "73",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "24",

}

TY - JOUR

T1 - Doping effects on the Raman spectra of silicon nanowires

AU - Meng, Chao Yu

AU - Chen, Jui Lin

AU - Lee, Si Chen

AU - Chia, Chih Ta

PY - 2006

Y1 - 2006

N2 - Un-doped, N -type, and P -type doped silicon nanowires (SiNWs) were grown at 460°C and 25 Torr via the vapor-liquid-solid (VLS) mechanism. The intensity ratio of anti-Stokes/Stokes (IAS IS) peaks is used as an index of the sample temperature. Different SiNWs exhibit different Raman frequency shifts because their compressive stresses due to heating differ. The slopes of the IAS IS peak ratio versus the Raman frequency for boron-doped, un-doped, phosphorous-doped SiNWs, and bulk Si are -0.078, -0.036, -0.035 and -0.02 per cm-1, respectively. The different slopes reveal the different heating-induced compressive stresses in the SiNWs with different dopants and bulk Si.

AB - Un-doped, N -type, and P -type doped silicon nanowires (SiNWs) were grown at 460°C and 25 Torr via the vapor-liquid-solid (VLS) mechanism. The intensity ratio of anti-Stokes/Stokes (IAS IS) peaks is used as an index of the sample temperature. Different SiNWs exhibit different Raman frequency shifts because their compressive stresses due to heating differ. The slopes of the IAS IS peak ratio versus the Raman frequency for boron-doped, un-doped, phosphorous-doped SiNWs, and bulk Si are -0.078, -0.036, -0.035 and -0.02 per cm-1, respectively. The different slopes reveal the different heating-induced compressive stresses in the SiNWs with different dopants and bulk Si.

UR - https://www.scopus.com/pages/publications/33745058734

UR - https://www.scopus.com/pages/publications/33745058734#tab=citedBy

U2 - 10.1103/PhysRevB.73.245309

DO - 10.1103/PhysRevB.73.245309

M3 - Article

AN - SCOPUS:33745058734

SN - 1098-0121

VL - 73

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 24

M1 - 245309

ER -

Doping effects on the Raman spectra of silicon nanowires

Abstract

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