Doping effects on the Raman spectra of silicon nanowires

Chao Yu Meng*, Jui Lin Chen, Si Chen Lee, Chih Ta Chia

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Un-doped, N -type, and P -type doped silicon nanowires (SiNWs) were grown at 460°C and 25 Torr via the vapor-liquid-solid (VLS) mechanism. The intensity ratio of anti-Stokes/Stokes (IAS IS) peaks is used as an index of the sample temperature. Different SiNWs exhibit different Raman frequency shifts because their compressive stresses due to heating differ. The slopes of the IAS IS peak ratio versus the Raman frequency for boron-doped, un-doped, phosphorous-doped SiNWs, and bulk Si are -0.078, -0.036, -0.035 and -0.02 per cm-1, respectively. The different slopes reveal the different heating-induced compressive stresses in the SiNWs with different dopants and bulk Si.

Original languageEnglish
Article number245309
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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