Doping effects on the Raman spectra of silicon nanowires

Chao Yu Meng, Jui Lin Chen, Si Chen Lee, Chih Ta Chia

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Un-doped, N -type, and P -type doped silicon nanowires (SiNWs) were grown at 460°C and 25 Torr via the vapor-liquid-solid (VLS) mechanism. The intensity ratio of anti-Stokes/Stokes (IAS IS) peaks is used as an index of the sample temperature. Different SiNWs exhibit different Raman frequency shifts because their compressive stresses due to heating differ. The slopes of the IAS IS peak ratio versus the Raman frequency for boron-doped, un-doped, phosphorous-doped SiNWs, and bulk Si are -0.078, -0.036, -0.035 and -0.02 per cm-1, respectively. The different slopes reveal the different heating-induced compressive stresses in the SiNWs with different dopants and bulk Si.

Original languageEnglish
Article number245309
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number24
DOIs
Publication statusPublished - 2006 Jun 20

Fingerprint

Silicon
Nanowires
Raman scattering
nanowires
Doping (additives)
Raman spectra
silicon
Compressive stress
slopes
Heating
heating
Boron
frequency shift
boron
Vapors
vapors
Liquids
liquids
Temperature
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Doping effects on the Raman spectra of silicon nanowires. / Meng, Chao Yu; Chen, Jui Lin; Lee, Si Chen; Chia, Chih Ta.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 73, No. 24, 245309, 20.06.2006.

Research output: Contribution to journalArticle

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