Doping and charge-carrier density effects in the cuprate superconductors

David B. Tanner; Young Duck Yoon; Axel Zibold; Hsiang Lin Liu; Manuel A. Quijada; S. W. Moore; John B. Graybeal; Beom Hoan O; John T. Markert; R. J. Kelley; Marshall Onellion; J. H. Cho

Doping and charge-carrier density effects in the cuprate superconductors

David B. Tanner, Young Duck Yoon, Axel Zibold, Hsiang Lin Liu, Manuel A. Quijada, S. W. Moore, John B. Graybeal, Beom Hoan O, John T. Markert, R. J. Kelley, Marshall Onellion, J. H. Cho

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Citations (Scopus)

Abstract

The undoped phases of the copper-oxide materials are antiferromagnetic insulators, with a gap of 1.5 - 2 eV. Infrared spectroscopy of these compounds reveals weak absorption, possibly of magnetic origin, in this gap. When the materials are doped, oscillator strength is removed from the charge transfer band. This oscillator strength moves to low frequency, to become midinfrared and free carrier absorption. A systematic study of the electron-doped Nd _{2- x}Ce _xCuO _4-y system reveals that the growth of low-frequency oscillator strength with doping concentration x is twice as rapid as in the case of hole-doped materials, such as La _2-xSr _xCuO ₄. This behavior is in accord with electronic structure models based on the 3-band Hubbard model and inconsistent with one-band behavior. However, an anomaly occurs for samples which are doped to the critical concentration for superconductivity; these have a greater than expected free-carrier concentration and weaker charge-transfer bands.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	I. Bozovic, D. van der Marel
Pages	13-23
Number of pages	11
Volume	2696
Edition	1/-
Publication status	Published - 1996 Dec 1
Event	Spectroscopic Studies of Superconductors. Part 2 (of 2) - San Jose, CA, USA, Taiwan Duration: 1996 Jan 29 → 1996 Feb 1

Conference

Conference	Spectroscopic Studies of Superconductors. Part 2 (of 2)
Country	Taiwan
City	San Jose, CA, USA
Period	1996/01/29 → 1996/02/01

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Tanner, D. B., Yoon, Y. D., Zibold, A., Liu, H. L., Quijada, M. A., Moore, S. W., Graybeal, J. B., O, B. H., Markert, J. T., Kelley, R. J., Onellion, M., & Cho, J. H. (1996). Doping and charge-carrier density effects in the cuprate superconductors. In I. Bozovic, & D. van der Marel (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (1/- ed., Vol. 2696 , pp. 13-23)

Doping and charge-carrier density effects in the cuprate superconductors. / Tanner, David B.; Yoon, Young Duck; Zibold, Axel; Liu, Hsiang Lin; Quijada, Manuel A.; Moore, S. W.; Graybeal, John B.; O, Beom Hoan; Markert, John T.; Kelley, R. J.; Onellion, Marshall; Cho, J. H.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / I. Bozovic; D. van der Marel. Vol. 2696 1/-. ed. 1996. p. 13-23.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tanner, DB, Yoon, YD, Zibold, A, Liu, HL, Quijada, MA, Moore, SW, Graybeal, JB, O, BH, Markert, JT, Kelley, RJ, Onellion, M & Cho, JH 1996, Doping and charge-carrier density effects in the cuprate superconductors. in I Bozovic & D van der Marel (eds), Proceedings of SPIE - The International Society for Optical Engineering. 1/- edn, vol. 2696 , pp. 13-23, Spectroscopic Studies of Superconductors. Part 2 (of 2), San Jose, CA, USA, Taiwan, 1996/01/29.

Tanner, David B. ; Yoon, Young Duck ; Zibold, Axel ; Liu, Hsiang Lin ; Quijada, Manuel A. ; Moore, S. W. ; Graybeal, John B. ; O, Beom Hoan ; Markert, John T. ; Kelley, R. J. ; Onellion, Marshall ; Cho, J. H. / Doping and charge-carrier density effects in the cuprate superconductors. Proceedings of SPIE - The International Society for Optical Engineering. editor / I. Bozovic ; D. van der Marel. Vol. 2696 1/-. ed. 1996. pp. 13-23

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AU - Moore, S. W.

AU - Graybeal, John B.

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N2 - The undoped phases of the copper-oxide materials are antiferromagnetic insulators, with a gap of 1.5 - 2 eV. Infrared spectroscopy of these compounds reveals weak absorption, possibly of magnetic origin, in this gap. When the materials are doped, oscillator strength is removed from the charge transfer band. This oscillator strength moves to low frequency, to become midinfrared and free carrier absorption. A systematic study of the electron-doped Nd 2- xCe xCuO 4-y system reveals that the growth of low-frequency oscillator strength with doping concentration x is twice as rapid as in the case of hole-doped materials, such as La 2-xSr xCuO 4. This behavior is in accord with electronic structure models based on the 3-band Hubbard model and inconsistent with one-band behavior. However, an anomaly occurs for samples which are doped to the critical concentration for superconductivity; these have a greater than expected free-carrier concentration and weaker charge-transfer bands.

AB - The undoped phases of the copper-oxide materials are antiferromagnetic insulators, with a gap of 1.5 - 2 eV. Infrared spectroscopy of these compounds reveals weak absorption, possibly of magnetic origin, in this gap. When the materials are doped, oscillator strength is removed from the charge transfer band. This oscillator strength moves to low frequency, to become midinfrared and free carrier absorption. A systematic study of the electron-doped Nd 2- xCe xCuO 4-y system reveals that the growth of low-frequency oscillator strength with doping concentration x is twice as rapid as in the case of hole-doped materials, such as La 2-xSr xCuO 4. This behavior is in accord with electronic structure models based on the 3-band Hubbard model and inconsistent with one-band behavior. However, an anomaly occurs for samples which are doped to the critical concentration for superconductivity; these have a greater than expected free-carrier concentration and weaker charge-transfer bands.

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