Abstract
The undoped phases of the copper-oxide materials are antiferromagnetic insulators, with a gap of 1.5 - 2 eV. Infrared spectroscopy of these compounds reveals weak absorption, possibly of magnetic origin, in this gap. When the materials are doped, oscillator strength is removed from the charge transfer band. This oscillator strength moves to low frequency, to become midinfrared and free carrier absorption. A systematic study of the electron-doped Nd 2- xCe xCuO 4-y system reveals that the growth of low-frequency oscillator strength with doping concentration x is twice as rapid as in the case of hole-doped materials, such as La 2-xSr xCuO 4. This behavior is in accord with electronic structure models based on the 3-band Hubbard model and inconsistent with one-band behavior. However, an anomaly occurs for samples which are doped to the critical concentration for superconductivity; these have a greater than expected free-carrier concentration and weaker charge-transfer bands.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | I. Bozovic, D. van der Marel |
| Pages | 13-23 |
| Number of pages | 11 |
| Volume | 2696 |
| Edition | 1/- |
| Publication status | Published - 1996 Dec 1 |
| Event | Spectroscopic Studies of Superconductors. Part 2 (of 2) - San Jose, CA, USA, Taiwan Duration: 1996 Jan 29 → 1996 Feb 1 |
Conference
| Conference | Spectroscopic Studies of Superconductors. Part 2 (of 2) |
|---|---|
| Country | Taiwan |
| City | San Jose, CA, USA |
| Period | 96/1/29 → 96/2/1 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
Doping and charge-carrier density effects in the cuprate superconductors. / Tanner, David B.; Yoon, Young Duck; Zibold, Axel; Liu, Hsiang Lin; Quijada, Manuel A.; Moore, S. W.; Graybeal, John B.; O, Beom Hoan; Markert, John T.; Kelley, R. J.; Onellion, Marshall; Cho, J. H.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / I. Bozovic; D. van der Marel. Vol. 2696 1/-. ed. 1996. p. 13-23.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Doping and charge-carrier density effects in the cuprate superconductors
AU - Tanner, David B.
AU - Yoon, Young Duck
AU - Zibold, Axel
AU - Liu, Hsiang Lin
AU - Quijada, Manuel A.
AU - Moore, S. W.
AU - Graybeal, John B.
AU - O, Beom Hoan
AU - Markert, John T.
AU - Kelley, R. J.
AU - Onellion, Marshall
AU - Cho, J. H.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - The undoped phases of the copper-oxide materials are antiferromagnetic insulators, with a gap of 1.5 - 2 eV. Infrared spectroscopy of these compounds reveals weak absorption, possibly of magnetic origin, in this gap. When the materials are doped, oscillator strength is removed from the charge transfer band. This oscillator strength moves to low frequency, to become midinfrared and free carrier absorption. A systematic study of the electron-doped Nd 2- xCe xCuO 4-y system reveals that the growth of low-frequency oscillator strength with doping concentration x is twice as rapid as in the case of hole-doped materials, such as La 2-xSr xCuO 4. This behavior is in accord with electronic structure models based on the 3-band Hubbard model and inconsistent with one-band behavior. However, an anomaly occurs for samples which are doped to the critical concentration for superconductivity; these have a greater than expected free-carrier concentration and weaker charge-transfer bands.
AB - The undoped phases of the copper-oxide materials are antiferromagnetic insulators, with a gap of 1.5 - 2 eV. Infrared spectroscopy of these compounds reveals weak absorption, possibly of magnetic origin, in this gap. When the materials are doped, oscillator strength is removed from the charge transfer band. This oscillator strength moves to low frequency, to become midinfrared and free carrier absorption. A systematic study of the electron-doped Nd 2- xCe xCuO 4-y system reveals that the growth of low-frequency oscillator strength with doping concentration x is twice as rapid as in the case of hole-doped materials, such as La 2-xSr xCuO 4. This behavior is in accord with electronic structure models based on the 3-band Hubbard model and inconsistent with one-band behavior. However, an anomaly occurs for samples which are doped to the critical concentration for superconductivity; these have a greater than expected free-carrier concentration and weaker charge-transfer bands.
UR - http://www.scopus.com/inward/record.url?scp=0030412258&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030412258&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0030412258
SN - 0819420700
SN - 9780819420701
VL - 2696
SP - 13
EP - 23
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Bozovic, I.
A2 - van der Marel, D.
ER -