Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy

Ph Ebert, S. Landrock, Ya-Ping Chiu, U. Breuer, R. E. Dunin-Borkowski

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effect of counterdoping on the Be dopant distribution in delta (δ)-doped layers embedded in Si-doped and intrinsic GaAs is investigated by cross-sectional scanning tunneling microscopy. δ-doped layers in intrinsic GaAs exhibit a large spreading, whereas those surrounded by Si-doped GaAs remain spatially localized. The different spreading is explained by the Fermi-level pinning at the growth surface, which leads to an increased Ga vacancies concentration with increasing Si counterdoping. The Ga vacancies act as sinks for the diffusing Be dopant atoms, hence retarding the spreading.

Original languageEnglish
Article number192103
JournalApplied Physics Letters
Volume101
Issue number19
DOIs
Publication statusPublished - 2012 Nov 5
Externally publishedYes

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scanning tunneling microscopy
sinks
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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy. / Ebert, Ph; Landrock, S.; Chiu, Ya-Ping; Breuer, U.; Dunin-Borkowski, R. E.

In: Applied Physics Letters, Vol. 101, No. 19, 192103, 05.11.2012.

Research output: Contribution to journalArticle

Ebert, Ph ; Landrock, S. ; Chiu, Ya-Ping ; Breuer, U. ; Dunin-Borkowski, R. E. / Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy. In: Applied Physics Letters. 2012 ; Vol. 101, No. 19.
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