Disorder controlled hole transport in MEH-PPV

Anto Regis Inigo, Hsiang Chih Chiu, Wunshain Fann, Ying Sheng Huang, U. Ser Jeng, Tsang Lang Lin, Chia Hung Hsu, Kang Yung Peng, Show An Chen

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

We analyze the correlation between nanostructure and charge transport in poly(2-methoxy,5-(2′ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) films. The MEH-PPV films prepared in toluene (TL) as well as chlorobenzene (CB) solvents were investigated using the time-of-flight method and x-ray scattering. Nondispersive hole transport was observed at room temperature in devices prepared from both solutions. The field and temperature-dependent mobility were analyzed by the Gaussian disorder transport model. The positional disorder parameter in CB is larger than that in TL films. Both energy and position disorders affect the transport property in the devices from CB whereas only energy disorder affects this property in devices from TL. Correspondingly, according to the x-ray scattering measurements, the TL-cast films have larger chain-packed domains and less order-disorder transition interfaces than those for CB-cast films, along the surface normal, i.e., the charge transport direction.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number7
DOIs
Publication statusPublished - 2004 Feb 2

Fingerprint

chlorobenzenes
Toluene
disorders
toluene
x ray scattering
Charge transfer
casts
Scattering
X rays
Order disorder transitions
Transport properties
Nanostructures
transport properties
Temperature
chlorobenzene
energy
room temperature
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Disorder controlled hole transport in MEH-PPV. / Inigo, Anto Regis; Chiu, Hsiang Chih; Fann, Wunshain; Huang, Ying Sheng; Jeng, U. Ser; Lin, Tsang Lang; Hsu, Chia Hung; Peng, Kang Yung; Chen, Show An.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 7, 02.02.2004.

Research output: Contribution to journalArticle

Inigo, AR, Chiu, HC, Fann, W, Huang, YS, Jeng, US, Lin, TL, Hsu, CH, Peng, KY & Chen, SA 2004, 'Disorder controlled hole transport in MEH-PPV', Physical Review B - Condensed Matter and Materials Physics, vol. 69, no. 7. https://doi.org/10.1103/PhysRevB.69.075201
Inigo, Anto Regis ; Chiu, Hsiang Chih ; Fann, Wunshain ; Huang, Ying Sheng ; Jeng, U. Ser ; Lin, Tsang Lang ; Hsu, Chia Hung ; Peng, Kang Yung ; Chen, Show An. / Disorder controlled hole transport in MEH-PPV. In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 69, No. 7.
@article{a11440dfda994fc891ca240d386175dc,
title = "Disorder controlled hole transport in MEH-PPV",
abstract = "We analyze the correlation between nanostructure and charge transport in poly(2-methoxy,5-(2′ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) films. The MEH-PPV films prepared in toluene (TL) as well as chlorobenzene (CB) solvents were investigated using the time-of-flight method and x-ray scattering. Nondispersive hole transport was observed at room temperature in devices prepared from both solutions. The field and temperature-dependent mobility were analyzed by the Gaussian disorder transport model. The positional disorder parameter in CB is larger than that in TL films. Both energy and position disorders affect the transport property in the devices from CB whereas only energy disorder affects this property in devices from TL. Correspondingly, according to the x-ray scattering measurements, the TL-cast films have larger chain-packed domains and less order-disorder transition interfaces than those for CB-cast films, along the surface normal, i.e., the charge transport direction.",
author = "Inigo, {Anto Regis} and Chiu, {Hsiang Chih} and Wunshain Fann and Huang, {Ying Sheng} and Jeng, {U. Ser} and Lin, {Tsang Lang} and Hsu, {Chia Hung} and Peng, {Kang Yung} and Chen, {Show An}",
year = "2004",
month = "2",
day = "2",
doi = "10.1103/PhysRevB.69.075201",
language = "English",
volume = "69",
journal = "Physical Review B - Condensed Matter and Materials Physics",
issn = "1098-0121",
number = "7",

}

TY - JOUR

T1 - Disorder controlled hole transport in MEH-PPV

AU - Inigo, Anto Regis

AU - Chiu, Hsiang Chih

AU - Fann, Wunshain

AU - Huang, Ying Sheng

AU - Jeng, U. Ser

AU - Lin, Tsang Lang

AU - Hsu, Chia Hung

AU - Peng, Kang Yung

AU - Chen, Show An

PY - 2004/2/2

Y1 - 2004/2/2

N2 - We analyze the correlation between nanostructure and charge transport in poly(2-methoxy,5-(2′ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) films. The MEH-PPV films prepared in toluene (TL) as well as chlorobenzene (CB) solvents were investigated using the time-of-flight method and x-ray scattering. Nondispersive hole transport was observed at room temperature in devices prepared from both solutions. The field and temperature-dependent mobility were analyzed by the Gaussian disorder transport model. The positional disorder parameter in CB is larger than that in TL films. Both energy and position disorders affect the transport property in the devices from CB whereas only energy disorder affects this property in devices from TL. Correspondingly, according to the x-ray scattering measurements, the TL-cast films have larger chain-packed domains and less order-disorder transition interfaces than those for CB-cast films, along the surface normal, i.e., the charge transport direction.

AB - We analyze the correlation between nanostructure and charge transport in poly(2-methoxy,5-(2′ethyl-hexyloxy)-p-phenylene vinylene) (MEH-PPV) films. The MEH-PPV films prepared in toluene (TL) as well as chlorobenzene (CB) solvents were investigated using the time-of-flight method and x-ray scattering. Nondispersive hole transport was observed at room temperature in devices prepared from both solutions. The field and temperature-dependent mobility were analyzed by the Gaussian disorder transport model. The positional disorder parameter in CB is larger than that in TL films. Both energy and position disorders affect the transport property in the devices from CB whereas only energy disorder affects this property in devices from TL. Correspondingly, according to the x-ray scattering measurements, the TL-cast films have larger chain-packed domains and less order-disorder transition interfaces than those for CB-cast films, along the surface normal, i.e., the charge transport direction.

UR - http://www.scopus.com/inward/record.url?scp=1642298782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1642298782&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.69.075201

DO - 10.1103/PhysRevB.69.075201

M3 - Article

AN - SCOPUS:1642298782

VL - 69

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 1098-0121

IS - 7

ER -