Direct measurement of interfacial structure in epitaxial Gd 2O3 on GaAs (0 0 1) using scanning tunneling microscopy

Y. P. Chiu, M. C. Shih, B. C. Huang, J. Y. Shen, M. L. Huang, W. C. Lee, P. Chang, T. H. Chiang, M. Hong, J. Kwo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The epitaxial growth of Gd2O3 on GaAs (0 0 1) has given a low interfacial density of states, resulting in the demonstration of the first inversion-channel GaAs metal-oxide-semiconductor field-effect transistor. Motivated by the significance of this discovery, in this work, cross-sectional scanning tunneling microscopy is employed herein to obtain precise structural and electronic information on these epitaxial films and interfaces. At the interface, the interfacial stacking of Gd2O3 films is directly correlated with the stacking sequence of the substrate GaAs. Additionally, from the local electronic states across the gate oxides, the spatial extent of the GaAs wavefunctions into the oxide dielectric may suggest a minimum Gd2O3 thickness to be of bulk properties.

Original languageEnglish
Pages (from-to)1058-1060
Number of pages3
JournalMicroelectronic Engineering
Volume88
Issue number7
DOIs
Publication statusPublished - 2011 Jul 1

Keywords

  • Electronic information
  • GaAs
  • GdO
  • Interfacial stacking
  • Scanning tunneling microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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    Chiu, Y. P., Shih, M. C., Huang, B. C., Shen, J. Y., Huang, M. L., Lee, W. C., Chang, P., Chiang, T. H., Hong, M., & Kwo, J. (2011). Direct measurement of interfacial structure in epitaxial Gd 2O3 on GaAs (0 0 1) using scanning tunneling microscopy. Microelectronic Engineering, 88(7), 1058-1060. https://doi.org/10.1016/j.mee.2011.03.042