Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes

Chun Ying Huang, Fu Fan Hsu, Chia Ling Wu, Ming Liang Chen, Ping Hung Tsai, Sian Rong Tong, Ting Wei Yeh, Ya Ju Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Transfer-free graphene has been directly grown on ZnO nanorods (NRs)/p-GaN LEDs by a feasible approach involving rapid thermal annealing of amorphous carbon and nickel layers. Compared with conventional ZnO NRs/p-GaN LEDs without a current spreading layer, the current–voltage characteristic and electroluminescence performance are enhanced, mainly attributed to more efficient current spreading by the transfer-free graphene that conformally covers the entire surface of ZnO NRs, leading to better carrier injection. It is hence expected that our scheme will be of great importance for nanostructured LED arrays with large-scale fabrication.

Original languageEnglish
Article number075103
JournalApplied Physics Express
Volume11
Issue number7
DOIs
Publication statusPublished - 2018 Jul 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes'. Together they form a unique fingerprint.

  • Cite this