Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes

Chun Ying Huang, Fu Fan Hsu, Chia Ling Wu, Ming Liang Chen, Ping Hung Tsai, Sian Rong Tong, Ting Wei Yeh, Ya Ju Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Transfer-free graphene has been directly grown on ZnO nanorods (NRs)/p-GaN LEDs by a feasible approach involving rapid thermal annealing of amorphous carbon and nickel layers. Compared with conventional ZnO NRs/p-GaN LEDs without a current spreading layer, the current–voltage characteristic and electroluminescence performance are enhanced, mainly attributed to more efficient current spreading by the transfer-free graphene that conformally covers the entire surface of ZnO NRs, leading to better carrier injection. It is hence expected that our scheme will be of great importance for nanostructured LED arrays with large-scale fabrication.

Original languageEnglish
Article number075103
JournalApplied Physics Express
Volume11
Issue number7
DOIs
Publication statusPublished - 2018 Jul 1

Fingerprint

Nanorods
Graphene
nanorods
Light emitting diodes
graphene
light emitting diodes
Rapid thermal annealing
carrier injection
Amorphous carbon
Electroluminescence
electroluminescence
Nickel
nickel
Fabrication
fabrication
annealing
carbon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes. / Huang, Chun Ying; Hsu, Fu Fan; Wu, Chia Ling; Chen, Ming Liang; Tsai, Ping Hung; Tong, Sian Rong; Yeh, Ting Wei; Lee, Ya Ju.

In: Applied Physics Express, Vol. 11, No. 7, 075103, 01.07.2018.

Research output: Contribution to journalArticle

Huang, Chun Ying ; Hsu, Fu Fan ; Wu, Chia Ling ; Chen, Ming Liang ; Tsai, Ping Hung ; Tong, Sian Rong ; Yeh, Ting Wei ; Lee, Ya Ju. / Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes. In: Applied Physics Express. 2018 ; Vol. 11, No. 7.
@article{2dbbf4d67d7a436dbd75b416741c26cb,
title = "Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes",
abstract = "Transfer-free graphene has been directly grown on ZnO nanorods (NRs)/p-GaN LEDs by a feasible approach involving rapid thermal annealing of amorphous carbon and nickel layers. Compared with conventional ZnO NRs/p-GaN LEDs without a current spreading layer, the current–voltage characteristic and electroluminescence performance are enhanced, mainly attributed to more efficient current spreading by the transfer-free graphene that conformally covers the entire surface of ZnO NRs, leading to better carrier injection. It is hence expected that our scheme will be of great importance for nanostructured LED arrays with large-scale fabrication.",
author = "Huang, {Chun Ying} and Hsu, {Fu Fan} and Wu, {Chia Ling} and Chen, {Ming Liang} and Tsai, {Ping Hung} and Tong, {Sian Rong} and Yeh, {Ting Wei} and Lee, {Ya Ju}",
year = "2018",
month = "7",
day = "1",
doi = "10.7567/APEX.11.075103",
language = "English",
volume = "11",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "7",

}

TY - JOUR

T1 - Direct formation of transfer-free graphene as current spreading layers on n-ZnO nanorods/p-GaN light-emitting diodes

AU - Huang, Chun Ying

AU - Hsu, Fu Fan

AU - Wu, Chia Ling

AU - Chen, Ming Liang

AU - Tsai, Ping Hung

AU - Tong, Sian Rong

AU - Yeh, Ting Wei

AU - Lee, Ya Ju

PY - 2018/7/1

Y1 - 2018/7/1

N2 - Transfer-free graphene has been directly grown on ZnO nanorods (NRs)/p-GaN LEDs by a feasible approach involving rapid thermal annealing of amorphous carbon and nickel layers. Compared with conventional ZnO NRs/p-GaN LEDs without a current spreading layer, the current–voltage characteristic and electroluminescence performance are enhanced, mainly attributed to more efficient current spreading by the transfer-free graphene that conformally covers the entire surface of ZnO NRs, leading to better carrier injection. It is hence expected that our scheme will be of great importance for nanostructured LED arrays with large-scale fabrication.

AB - Transfer-free graphene has been directly grown on ZnO nanorods (NRs)/p-GaN LEDs by a feasible approach involving rapid thermal annealing of amorphous carbon and nickel layers. Compared with conventional ZnO NRs/p-GaN LEDs without a current spreading layer, the current–voltage characteristic and electroluminescence performance are enhanced, mainly attributed to more efficient current spreading by the transfer-free graphene that conformally covers the entire surface of ZnO NRs, leading to better carrier injection. It is hence expected that our scheme will be of great importance for nanostructured LED arrays with large-scale fabrication.

UR - http://www.scopus.com/inward/record.url?scp=85049069520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049069520&partnerID=8YFLogxK

U2 - 10.7567/APEX.11.075103

DO - 10.7567/APEX.11.075103

M3 - Article

VL - 11

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 7

M1 - 075103

ER -