Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme

Chun Ying Huang, Ya Ju Lee, Tai Yuan Lin, Shao Lun Chang, Jan Tian Lian, Hsiu Mei Lin, Nie Chuan Chen, Ying Jay Yang

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


In this work p-ZnO/n-GaN heterojunction diodes were directly formed on the Si substrate by a combination of cost-effective solgel spin-coating and thermal annealing treatment. Spin-coated n-ZnO films on InN/GaN/Si wafers were converted to p-type polarity after thermal treatment of proper annealing durations. X-ray diffraction (XRD) analysis reveals that InN-codoped ZnO films have grown as the standard hexagonal wurtzite structure with a preferential orientation in the (002) direction. The intensity of the (002) peak decreases for a further extended annealing duration, indicating the greater incorporation of dopants, also confirmed by x-ray photoelectron spectroscopy and low-temperature photoluminescence. Hall and resistivity measurements validate that our p-type ZnO film has a high carrier concentration of 3.73 × 1017 cm-3, a high mobility of 210 cm2/Vs, and a low resistivity of 0.079 Ωcm. As a result, the proposed p-ZnO/n-GaN heterojunction diode displays a well-behaving current rectification of a typical p-n junction, and the measured current versus voltage (I-V) characteristic is hence well described by the modified Shockley equation. The research on the fabrication of p-ZnO/n-GaN heterojunctions shown here generates useful advances in the production of cost-effective ZnO-based optoelectronic devices.

Original languageEnglish
Pages (from-to)805-808
Number of pages4
JournalOptics Letters
Issue number4
Publication statusPublished - 2014 Feb 15

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


Dive into the research topics of 'Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme'. Together they form a unique fingerprint.

Cite this