Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme

Chun Ying Huang, Ya Ju Lee, Tai Yuan Lin, Shao Lun Chang, Jan Tian Lian, Hsiu Mei Lin, Nie Chuan Chen, Ying Jay Yang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this work p-ZnO/n-GaN heterojunction diodes were directly formed on the Si substrate by a combination of cost-effective solgel spin-coating and thermal annealing treatment. Spin-coated n-ZnO films on InN/GaN/Si wafers were converted to p-type polarity after thermal treatment of proper annealing durations. X-ray diffraction (XRD) analysis reveals that InN-codoped ZnO films have grown as the standard hexagonal wurtzite structure with a preferential orientation in the (002) direction. The intensity of the (002) peak decreases for a further extended annealing duration, indicating the greater incorporation of dopants, also confirmed by x-ray photoelectron spectroscopy and low-temperature photoluminescence. Hall and resistivity measurements validate that our p-type ZnO film has a high carrier concentration of 3.73 × 1017 cm-3, a high mobility of 210 cm2/Vs, and a low resistivity of 0.079 Ωcm. As a result, the proposed p-ZnO/n-GaN heterojunction diode displays a well-behaving current rectification of a typical p-n junction, and the measured current versus voltage (I-V) characteristic is hence well described by the modified Shockley equation. The research on the fabrication of p-ZnO/n-GaN heterojunctions shown here generates useful advances in the production of cost-effective ZnO-based optoelectronic devices.

Original languageEnglish
Pages (from-to)805-808
Number of pages4
JournalOptics Letters
Volume39
Issue number4
DOIs
Publication statusPublished - 2014 Feb 15

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coating
heterojunctions
Hot Temperature
diodes
Costs and Cost Analysis
Photoelectron Spectroscopy
annealing
X-Ray Diffraction
costs
electrical resistivity
X-Rays
rectification
optoelectronic devices
p-n junctions
Equipment and Supplies
wurtzite
x ray spectroscopy
Temperature
polarity
Research

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Huang, C. Y., Lee, Y. J., Lin, T. Y., Chang, S. L., Lian, J. T., Lin, H. M., ... Yang, Y. J. (2014). Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme. Optics Letters, 39(4), 805-808. https://doi.org/10.1364/OL.39.000805

Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme. / Huang, Chun Ying; Lee, Ya Ju; Lin, Tai Yuan; Chang, Shao Lun; Lian, Jan Tian; Lin, Hsiu Mei; Chen, Nie Chuan; Yang, Ying Jay.

In: Optics Letters, Vol. 39, No. 4, 15.02.2014, p. 805-808.

Research output: Contribution to journalArticle

Huang, CY, Lee, YJ, Lin, TY, Chang, SL, Lian, JT, Lin, HM, Chen, NC & Yang, YJ 2014, 'Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme', Optics Letters, vol. 39, no. 4, pp. 805-808. https://doi.org/10.1364/OL.39.000805
Huang, Chun Ying ; Lee, Ya Ju ; Lin, Tai Yuan ; Chang, Shao Lun ; Lian, Jan Tian ; Lin, Hsiu Mei ; Chen, Nie Chuan ; Yang, Ying Jay. / Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme. In: Optics Letters. 2014 ; Vol. 39, No. 4. pp. 805-808.
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