Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells

Ya Ju Lee; Yung Chi Yao; Chia Hao Yang

Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells

Ya Ju Lee^*
, Yung Chi Yao
, Chia Hao Yang

^*Corresponding author for this work

International Doctoral Program in Integrative STEM Education

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

Original language	English
Title of host publication	Conference on Lasers and Electro Optics, CLEO
Subtitle of host publication	Applications and Technology, CLEO_AT 2013
Pages	JW2A.83
Publication status	Published - 2013
Event	CLEO: Applications and Technology, CLEO_AT 2013 - San Jose, CA, United States Duration: 2013 Jun 9 → 2013 Jun 14

Publication series

Name	CLEO: Applications and Technology, CLEO_AT 2013

Other

Other	CLEO: Applications and Technology, CLEO_AT 2013
Country/Territory	United States
City	San Jose, CA
Period	2013/06/09 → 2013/06/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Cite this

Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells. / Lee, Ya Ju; Yao, Yung Chi; Yang, Chia Hao.
Conference on Lasers and Electro Optics, CLEO: Applications and Technology, CLEO_AT 2013. 2013. p. JW2A.83 (CLEO: Applications and Technology, CLEO_AT 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lee, YJ, Yao, YC & Yang, CH 2013, Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells. in Conference on Lasers and Electro Optics, CLEO: Applications and Technology, CLEO_AT 2013. CLEO: Applications and Technology, CLEO_AT 2013, pp. JW2A.83, CLEO: Applications and Technology, CLEO_AT 2013, San Jose, CA, United States, 2013/06/09.

@inproceedings{745357fcaaf5436bb6201a7606b12720,

title = "Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells",

abstract = "A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.",

author = "Lee, \{Ya Ju\} and Yao, \{Yung Chi\} and Yang, \{Chia Hao\}",

year = "2013",

language = "English",

isbn = "9781557529725",

series = "CLEO: Applications and Technology, CLEO\_AT 2013",

pages = "JW2A.83",

booktitle = "Conference on Lasers and Electro Optics, CLEO",

note = "CLEO: Applications and Technology, CLEO\_AT 2013 ; Conference date: 09-06-2013 Through 14-06-2013",

}

TY - GEN

T1 - Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells

AU - Lee, Ya Ju

AU - Yao, Yung Chi

AU - Yang, Chia Hao

PY - 2013

Y1 - 2013

N2 - A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

AB - A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

UR - https://www.scopus.com/pages/publications/84887540499

UR - https://www.scopus.com/pages/publications/84887540499#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:84887540499

SN - 9781557529725

T3 - CLEO: Applications and Technology, CLEO_AT 2013

SP - JW2A.83

BT - Conference on Lasers and Electro Optics, CLEO

T2 - CLEO: Applications and Technology, CLEO_AT 2013

Y2 - 9 June 2013 through 14 June 2013

ER -

Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells

Abstract

Publication series

Other

UN SDGs

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this