TY - JOUR
T1 - Direct electrical contact of slanted ito film on axial p-n junction silicon nanowire solar cells
AU - Lee, Ya Ju
AU - Yao, Yung Chi
AU - Yang, Chia Hao
PY - 2013/1/14
Y1 - 2013/1/14
N2 - A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. The slanted ITO film exhibits an acceptable resistivity of 1.07x10.3-cm underwent RTA treatment of T = 450C, and the doping concentration and carrier mobility by Hall measurement amount to 3.7x1020cm.3 and 15.8cm2/V-s, respectively, with an n-type doping polarity. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode. Under AM 1.5G normal illumination, our axial p-n junction SiNW solar cell exhibits an open circuit voltage of VOC = 0.56V, and a short circuit current of JSC = 1.54 mA/cm2 with a fill factor of FF = 30%, resulting in a total power conversion efficiency of PEC = 0.26%.
AB - A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. The slanted ITO film exhibits an acceptable resistivity of 1.07x10.3-cm underwent RTA treatment of T = 450C, and the doping concentration and carrier mobility by Hall measurement amount to 3.7x1020cm.3 and 15.8cm2/V-s, respectively, with an n-type doping polarity. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode. Under AM 1.5G normal illumination, our axial p-n junction SiNW solar cell exhibits an open circuit voltage of VOC = 0.56V, and a short circuit current of JSC = 1.54 mA/cm2 with a fill factor of FF = 30%, resulting in a total power conversion efficiency of PEC = 0.26%.
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U2 - 10.1364/OE.21.0000A7
DO - 10.1364/OE.21.0000A7
M3 - Article
C2 - 23389277
AN - SCOPUS:84872738326
SN - 1094-4087
VL - 21
SP - A7-A14
JO - Optics Express
JF - Optics Express
IS - 101
ER -
