Direct electrical contact of slanted ito film on axial p-n junction silicon nanowire solar cells

Ya Ju Lee, Yung Chi Yao, Chia Hao Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationQELS_Fundamental Science, CLEO:QELS FS 2013
PagesJW2A.83
Publication statusPublished - 2013 Nov 21
Externally publishedYes
EventCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 - San Jose, CA, United States
Duration: 2013 Jun 92013 Jun 14

Publication series

NameCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013

Other

OtherCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
CountryUnited States
CitySan Jose, CA
Period13/6/913/6/14

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Lee, Y. J., Yao, Y. C., & Yang, C. H. (2013). Direct electrical contact of slanted ito film on axial p-n junction silicon nanowire solar cells. In CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 (pp. JW2A.83). (CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013).