Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells

Ya Ju Lee, Yung Chi Yao, Chia Hao Yang

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

    Original languageEnglish
    Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
    PublisherIEEE Computer Society
    ISBN (Print)9781557529725
    DOIs
    Publication statusPublished - 2013
    Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
    Duration: 2013 Jun 92013 Jun 14

    Publication series

    Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

    Other

    Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
    CountryUnited States
    CitySan Jose, CA
    Period13/6/913/6/14

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

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