Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells

Ya Ju Lee, Yung Chi Yao, Chia Hao Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
Publication statusPublished - 2013 Jan 1
Externally publishedYes
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 2013 Jun 92013 Jun 14

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUnited States
CitySan Jose, CA
Period13/6/913/6/14

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, Y. J., Yao, Y. C., & Yang, C. H. (2013). Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013 [6834123] (2013 Conference on Lasers and Electro-Optics, CLEO 2013). IEEE Computer Society.