Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells

Ya Ju Lee*, Yung Chi Yao, Chia Hao Yang

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

    Original languageEnglish
    Title of host publicationConference on Lasers and Electro Optics, CLEO
    Subtitle of host publicationApplications and Technology, CLEO_AT 2013
    PagesJW2A.83
    Publication statusPublished - 2013 Nov 19
    EventCLEO: Applications and Technology, CLEO_AT 2013 - San Jose, CA, United States
    Duration: 2013 Jun 92013 Jun 14

    Publication series

    NameCLEO: Applications and Technology, CLEO_AT 2013

    Other

    OtherCLEO: Applications and Technology, CLEO_AT 2013
    Country/TerritoryUnited States
    CitySan Jose, CA
    Period2013/06/092013/06/14

    ASJC Scopus subject areas

    • Computer Networks and Communications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics

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