Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells

Ya-Ju Lee, Yung Chi Yao, Chia Hao Yang

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

    Original languageEnglish
    Title of host publicationConference on Lasers and Electro Optics, CLEO
    Subtitle of host publicationApplications and Technology, CLEO_AT 2013
    Publication statusPublished - 2013 Nov 19
    EventCLEO: Applications and Technology, CLEO_AT 2013 - San Jose, CA, United States
    Duration: 2013 Jun 92013 Jun 14

    Publication series

    NameCLEO: Applications and Technology, CLEO_AT 2013

    Other

    OtherCLEO: Applications and Technology, CLEO_AT 2013
    CountryUnited States
    CitySan Jose, CA
    Period13/6/913/6/14

    Fingerprint

    silicon junctions
    Silicon
    Tin oxides
    indium oxides
    Indium
    tin oxides
    Oxide films
    Nanowires
    oxide films
    electric contacts
    Solar cells
    nanowires
    solar cells
    p-n junctions
    Vapors
    grids
    vapors
    Fabrication
    Electrodes
    fabrication

    ASJC Scopus subject areas

    • Computer Networks and Communications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics

    Cite this

    Lee, Y-J., Yao, Y. C., & Yang, C. H. (2013). Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells. In Conference on Lasers and Electro Optics, CLEO: Applications and Technology, CLEO_AT 2013 (CLEO: Applications and Technology, CLEO_AT 2013).

    Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells. / Lee, Ya-Ju; Yao, Yung Chi; Yang, Chia Hao.

    Conference on Lasers and Electro Optics, CLEO: Applications and Technology, CLEO_AT 2013. 2013. (CLEO: Applications and Technology, CLEO_AT 2013).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Lee, Y-J, Yao, YC & Yang, CH 2013, Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells. in Conference on Lasers and Electro Optics, CLEO: Applications and Technology, CLEO_AT 2013. CLEO: Applications and Technology, CLEO_AT 2013, CLEO: Applications and Technology, CLEO_AT 2013, San Jose, CA, United States, 13/6/9.
    Lee Y-J, Yao YC, Yang CH. Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells. In Conference on Lasers and Electro Optics, CLEO: Applications and Technology, CLEO_AT 2013. 2013. (CLEO: Applications and Technology, CLEO_AT 2013).
    Lee, Ya-Ju ; Yao, Yung Chi ; Yang, Chia Hao. / Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells. Conference on Lasers and Electro Optics, CLEO: Applications and Technology, CLEO_AT 2013. 2013. (CLEO: Applications and Technology, CLEO_AT 2013).
    @inproceedings{873eb3605c044df0b259c46d590babd1,
    title = "Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells",
    abstract = "A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.",
    author = "Ya-Ju Lee and Yao, {Yung Chi} and Yang, {Chia Hao}",
    year = "2013",
    month = "11",
    day = "19",
    language = "English",
    isbn = "9781557529725",
    series = "CLEO: Applications and Technology, CLEO_AT 2013",
    booktitle = "Conference on Lasers and Electro Optics, CLEO",

    }

    TY - GEN

    T1 - Direct electrical contact of slanted ITO film on axial P-N junction silicon nanowire solar cells

    AU - Lee, Ya-Ju

    AU - Yao, Yung Chi

    AU - Yang, Chia Hao

    PY - 2013/11/19

    Y1 - 2013/11/19

    N2 - A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

    AB - A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

    UR - http://www.scopus.com/inward/record.url?scp=84887540499&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84887540499&partnerID=8YFLogxK

    M3 - Conference contribution

    AN - SCOPUS:84887540499

    SN - 9781557529725

    T3 - CLEO: Applications and Technology, CLEO_AT 2013

    BT - Conference on Lasers and Electro Optics, CLEO

    ER -