Abstract
A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.
| Original language | English |
|---|---|
| Title of host publication | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 |
| Publisher | IEEE Computer Society |
| ISBN (Print) | 9781557529725 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States Duration: 2013 Jun 9 → 2013 Jun 14 |
Publication series
| Name | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 |
|---|
Other
| Other | 2013 Conference on Lasers and Electro-Optics, CLEO 2013 |
|---|---|
| Country/Territory | United States |
| City | San Jose, CA |
| Period | 2013/06/09 → 2013/06/14 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
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