TY - GEN
T1 - Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells
AU - Lee, Ya Ju
AU - Yao, Yung Chi
AU - Yang, Chia Hao
PY - 2013
Y1 - 2013
N2 - A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.
AB - A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.
UR - http://www.scopus.com/inward/record.url?scp=84903777466&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903777466&partnerID=8YFLogxK
U2 - 10.1364/cleo_at.2013.jw2a.83
DO - 10.1364/cleo_at.2013.jw2a.83
M3 - Conference contribution
AN - SCOPUS:84903777466
SN - 9781557529725
T3 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013
BT - 2013 Conference on Lasers and Electro-Optics, CLEO 2013
PB - IEEE Computer Society
T2 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013
Y2 - 9 June 2013 through 14 June 2013
ER -
