Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells

Ya Ju Lee, Yung Chi Yao, Chia Hao Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
DOIs
Publication statusPublished - 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: 2013 Jun 92013 Jun 14

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
Country/TerritoryUnited States
CitySan Jose, CA
Period2013/06/092013/06/14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Direct electrical contact of slanted ITO film on axial p-n junction silicon nanowire solar cells'. Together they form a unique fingerprint.

Cite this