Direct electrical contact of slanted ito film on axial p-n junction silicon nanowire solar cells

Ya Ju Lee*, Yung Chi Yao, Chia Hao Yang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationQELS_Fundamental Science, CLEO:QELS FS 2013
PagesJW2A.83
Publication statusPublished - 2013
EventCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013 - San Jose, CA, United States
Duration: 2013 Jun 92013 Jun 14

Publication series

NameCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013

Conference

ConferenceCLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
Country/TerritoryUnited States
CitySan Jose, CA
Period2013/06/092013/06/14

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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