Direct electrical contact of slanted ito film on axial p-n junction silicon nanowire solar cells

Ya Ju Lee, Yung Chi Yao, Chia Hao Yang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A novel scheme of direct electrical contact on vertically aligned silicon nanowire (SiNW) axial p-n junction is demonstrated by means of oblique-angle deposition of slanted indium-tin-oxide (ITO) film for photovoltaic applications. The slanted ITO film exhibits an acceptable resistivity of 1.07x10.3-cm underwent RTA treatment of T = 450C, and the doping concentration and carrier mobility by Hall measurement amount to 3.7x1020cm.3 and 15.8cm2/V-s, respectively, with an n-type doping polarity. Because of the shadowing effect provided by the SiNWs, the incident ITO vapor-flow is deposited preferentially on the top of SiNWs, which coalesces and eventually forms a nearly continuous film for the subsequent fabrication of grid electrode. Under AM 1.5G normal illumination, our axial p-n junction SiNW solar cell exhibits an open circuit voltage of VOC = 0.56V, and a short circuit current of JSC = 1.54 mA/cm2 with a fill factor of FF = 30%, resulting in a total power conversion efficiency of PEC = 0.26%.

Original languageEnglish
Pages (from-to)A7-A14
JournalOptics Express
Volume21
Issue number101
DOIs
Publication statusPublished - 2013 Jan 14

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p-n junctions
indium oxides
tin oxides
electric contacts
nanowires
solar cells
oxide films
silicon
volatile organic compounds
short circuit currents
carrier mobility
open circuit voltage
polarity
illumination
grids
vapors
fabrication
electrical resistivity
electrodes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Direct electrical contact of slanted ito film on axial p-n junction silicon nanowire solar cells. / Lee, Ya Ju; Yao, Yung Chi; Yang, Chia Hao.

In: Optics Express, Vol. 21, No. 101, 14.01.2013, p. A7-A14.

Research output: Contribution to journalArticle

Lee, Ya Ju ; Yao, Yung Chi ; Yang, Chia Hao. / Direct electrical contact of slanted ito film on axial p-n junction silicon nanowire solar cells. In: Optics Express. 2013 ; Vol. 21, No. 101. pp. A7-A14.
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