Dimensional reduction of a layered metal chalcogenide into a 1D near-IR direct band gap semiconductor

Yi Hsin Liu; Spencer H. Porter; Joshua E. Goldberger

doi:10.1021/ja211765y

Dimensional reduction of a layered metal chalcogenide into a 1D near-IR direct band gap semiconductor

Yi Hsin Liu, Spencer H. Porter, Joshua E. Goldberger^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

Reducing the dimensionality of inorganic lattices allows for the creation of new materials that have unique optoelectronic properties. We demonstrate that a layered metal chalcogenide lattice, TiS ₂, can form a dimensionally reduced crystalline one-dimensional hybrid organic/inorganic TiS ₂(ethylenediamine) framework when synthesized from molecular precursors in solution. This solid has strong absorption above 1.70 eV and pronounced emission in the near-IR regime. The energy dependence of the absorption, the near-IR photoluminescence, and electronic band structure calculations confirm that TiS ₂(ethylenediamine) has a direct band gap.

Original language	English
Pages (from-to)	5044-5047
Number of pages	4
Journal	Journal of the American Chemical Society
Volume	134
Issue number	11
DOIs	https://doi.org/10.1021/ja211765y
Publication status	Published - 2012 Mar 21
Externally published	Yes

ASJC Scopus subject areas

Catalysis
General Chemistry
Biochemistry
Colloid and Surface Chemistry

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title = "Dimensional reduction of a layered metal chalcogenide into a 1D near-IR direct band gap semiconductor",

abstract = "Reducing the dimensionality of inorganic lattices allows for the creation of new materials that have unique optoelectronic properties. We demonstrate that a layered metal chalcogenide lattice, TiS 2, can form a dimensionally reduced crystalline one-dimensional hybrid organic/inorganic TiS 2(ethylenediamine) framework when synthesized from molecular precursors in solution. This solid has strong absorption above 1.70 eV and pronounced emission in the near-IR regime. The energy dependence of the absorption, the near-IR photoluminescence, and electronic band structure calculations confirm that TiS 2(ethylenediamine) has a direct band gap.",

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AU - Porter, Spencer H.

AU - Goldberger, Joshua E.

PY - 2012/3/21

Y1 - 2012/3/21

N2 - Reducing the dimensionality of inorganic lattices allows for the creation of new materials that have unique optoelectronic properties. We demonstrate that a layered metal chalcogenide lattice, TiS 2, can form a dimensionally reduced crystalline one-dimensional hybrid organic/inorganic TiS 2(ethylenediamine) framework when synthesized from molecular precursors in solution. This solid has strong absorption above 1.70 eV and pronounced emission in the near-IR regime. The energy dependence of the absorption, the near-IR photoluminescence, and electronic band structure calculations confirm that TiS 2(ethylenediamine) has a direct band gap.

AB - Reducing the dimensionality of inorganic lattices allows for the creation of new materials that have unique optoelectronic properties. We demonstrate that a layered metal chalcogenide lattice, TiS 2, can form a dimensionally reduced crystalline one-dimensional hybrid organic/inorganic TiS 2(ethylenediamine) framework when synthesized from molecular precursors in solution. This solid has strong absorption above 1.70 eV and pronounced emission in the near-IR regime. The energy dependence of the absorption, the near-IR photoluminescence, and electronic band structure calculations confirm that TiS 2(ethylenediamine) has a direct band gap.

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Dimensional reduction of a layered metal chalcogenide into a 1D near-IR direct band gap semiconductor

Abstract

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