Dimensional reduction of a layered metal chalcogenide into a 1D near-IR direct band gap semiconductor

Yi Hsin Liu, Spencer H. Porter, Joshua E. Goldberger

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Reducing the dimensionality of inorganic lattices allows for the creation of new materials that have unique optoelectronic properties. We demonstrate that a layered metal chalcogenide lattice, TiS 2, can form a dimensionally reduced crystalline one-dimensional hybrid organic/inorganic TiS 2(ethylenediamine) framework when synthesized from molecular precursors in solution. This solid has strong absorption above 1.70 eV and pronounced emission in the near-IR regime. The energy dependence of the absorption, the near-IR photoluminescence, and electronic band structure calculations confirm that TiS 2(ethylenediamine) has a direct band gap.

Original languageEnglish
Pages (from-to)5044-5047
Number of pages4
JournalJournal of the American Chemical Society
Volume134
Issue number11
DOIs
Publication statusPublished - 2012 Mar 21

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ethylenediamine
Semiconductors
Crystal lattices
Optoelectronic devices
Band structure
Photoluminescence
Energy gap
Metals
Semiconductor materials
Crystalline materials

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Dimensional reduction of a layered metal chalcogenide into a 1D near-IR direct band gap semiconductor. / Liu, Yi Hsin; Porter, Spencer H.; Goldberger, Joshua E.

In: Journal of the American Chemical Society, Vol. 134, No. 11, 21.03.2012, p. 5044-5047.

Research output: Contribution to journalArticle

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