Diffusion and elementary atomic processes at steeped surfaces

Tien T. Tsong, Tsu-Yi Fu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The mobility of atoms at and near lattice step edges plays an important role in epitaxial growth and surface morphology of thin films, and the dynamic behavior of surfaces at elevated temperature. We summarize our recent FIM studies on how atoms move and bind at step edges, how atoms can descend and ascend lattice steps, how in-layer atoms can move up to the upper terrace, and how these atomic processes are related to various growth structures in thin film epitaxy.

Original languageEnglish
Pages (from-to)233-239
Number of pages7
JournalProgress in Surface Science
Volume53
Issue number2-4
DOIs
Publication statusPublished - 1996 Jan 1

Fingerprint

Atoms
Epitaxial growth
atoms
Thin films
thin films
Crystal lattices
epitaxy
Surface morphology
Temperature
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Diffusion and elementary atomic processes at steeped surfaces. / Tsong, Tien T.; Fu, Tsu-Yi.

In: Progress in Surface Science, Vol. 53, No. 2-4, 01.01.1996, p. 233-239.

Research output: Contribution to journalArticle

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