Dielectric properties of Bi2(Zn1/3Nb2/3)2O7 thin films measured by fourier transform infrared spectroscopy

Yi Chun Chen; Hsiang Lin Liu; Hsiu Fung Cheng; I. Nan Lin

doi:10.1016/S0955-2219(01)00099-1

Dielectric properties of Bi₂(Zn_1/3Nb_2/3)₂O₇ thin films measured by fourier transform infrared spectroscopy

Yi Chun Chen, Hsiang Lin Liu, Hsiu Fung Cheng^*, I. Nan Lin

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report the far infrared measurement for comparing the dielectric properties of properties to the microwave frequency region for the thin films (ε₁)_film =20 is markedly smaller than those for bulk ceramics. The frequency response, measured by Fourier transform infrared spectroscopy (FTIR), reveals that the phonon peaks of BiZN thin films occur at higher frequencies and have smaller amplitudes, as compared to those of BiZN bulk. This phenomenon implies that the smaller dielectric constant for BiZN thin films is due to the strain induced in the thin films.

Original language	English
Pages (from-to)	1711-1714
Number of pages	4
Journal	Journal of the European Ceramic Society
Volume	21
Issue number	10-11
DOIs	https://doi.org/10.1016/S0955-2219(01)00099-1
Publication status	Published - 2001

Keywords

Dielectric properties
FTIR
Films
Microwave ceramics

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/S0955-2219(01)00099-1

Cite this

@article{a89ba61d5dd5499aaa9a19764bf4fdf3,

title = "Dielectric properties of Bi2(Zn1/3Nb2/3)2O7 thin films measured by fourier transform infrared spectroscopy",

abstract = "We report the far infrared measurement for comparing the dielectric properties of properties to the microwave frequency region for the thin films (ε1)film =20 is markedly smaller than those for bulk ceramics. The frequency response, measured by Fourier transform infrared spectroscopy (FTIR), reveals that the phonon peaks of BiZN thin films occur at higher frequencies and have smaller amplitudes, as compared to those of BiZN bulk. This phenomenon implies that the smaller dielectric constant for BiZN thin films is due to the strain induced in the thin films.",

keywords = "Dielectric properties, FTIR, Films, Microwave ceramics",

author = "Chen, {Yi Chun} and Liu, {Hsiang Lin} and Cheng, {Hsiu Fung} and Lin, {I. Nan}",

note = "Funding Information: The authors wish to thank Luu-Gen Hwa and Yi-Rui Chang, Department of Physics, Fu-Jen Catholic University, Taipei, Taiwan, ROC, for technical assistance of far-infrared measurement. Financial support of National Science Council, ROC through the project No. NSC 89-2112-M-003-037 is gratefully acknowledged by the authors.",

year = "2001",

doi = "10.1016/S0955-2219(01)00099-1",

language = "English",

volume = "21",

pages = "1711--1714",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier BV",

number = "10-11",

}

TY - JOUR

T1 - Dielectric properties of Bi2(Zn1/3Nb2/3)2O7 thin films measured by fourier transform infrared spectroscopy

AU - Chen, Yi Chun

AU - Liu, Hsiang Lin

AU - Cheng, Hsiu Fung

AU - Lin, I. Nan

N1 - Funding Information: The authors wish to thank Luu-Gen Hwa and Yi-Rui Chang, Department of Physics, Fu-Jen Catholic University, Taipei, Taiwan, ROC, for technical assistance of far-infrared measurement. Financial support of National Science Council, ROC through the project No. NSC 89-2112-M-003-037 is gratefully acknowledged by the authors.

PY - 2001

Y1 - 2001

N2 - We report the far infrared measurement for comparing the dielectric properties of properties to the microwave frequency region for the thin films (ε1)film =20 is markedly smaller than those for bulk ceramics. The frequency response, measured by Fourier transform infrared spectroscopy (FTIR), reveals that the phonon peaks of BiZN thin films occur at higher frequencies and have smaller amplitudes, as compared to those of BiZN bulk. This phenomenon implies that the smaller dielectric constant for BiZN thin films is due to the strain induced in the thin films.

AB - We report the far infrared measurement for comparing the dielectric properties of properties to the microwave frequency region for the thin films (ε1)film =20 is markedly smaller than those for bulk ceramics. The frequency response, measured by Fourier transform infrared spectroscopy (FTIR), reveals that the phonon peaks of BiZN thin films occur at higher frequencies and have smaller amplitudes, as compared to those of BiZN bulk. This phenomenon implies that the smaller dielectric constant for BiZN thin films is due to the strain induced in the thin films.

KW - Dielectric properties

KW - FTIR

KW - Films

KW - Microwave ceramics

UR - http://www.scopus.com/inward/record.url?scp=0034883474&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034883474&partnerID=8YFLogxK

U2 - 10.1016/S0955-2219(01)00099-1

DO - 10.1016/S0955-2219(01)00099-1

M3 - Article

AN - SCOPUS:0034883474

SN - 0955-2219

VL - 21

SP - 1711

EP - 1714

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 10-11

ER -