Dielectric properties of Bi2(Zn1/3Nb2/3)2O7 thin films measured by fourier transform infrared spectroscopy

Yi Chun Chen, Hsiang Lin Liu, Hsiu Fung Cheng*, I. Nan Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We report the far infrared measurement for comparing the dielectric properties of properties to the microwave frequency region for the thin films (ε1)film =20 is markedly smaller than those for bulk ceramics. The frequency response, measured by Fourier transform infrared spectroscopy (FTIR), reveals that the phonon peaks of BiZN thin films occur at higher frequencies and have smaller amplitudes, as compared to those of BiZN bulk. This phenomenon implies that the smaller dielectric constant for BiZN thin films is due to the strain induced in the thin films.

Original languageEnglish
Pages (from-to)1711-1714
Number of pages4
JournalJournal of the European Ceramic Society
Issue number10-11
Publication statusPublished - 2001


  • Dielectric properties
  • FTIR
  • Films
  • Microwave ceramics

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry


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