Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

Y. J. Lee; P. C. Lin; T. C. Lu; H. C. Kuo; S. C. Wang

doi:10.1063/1.2722672

Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

Y. J. Lee^*, P. C. Lin, T. C. Lu, H. C. Kuo, S. C. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 Im/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting.

Original language	English
Article number	161115
Journal	Applied Physics Letters
Volume	90
Issue number	16
DOIs	https://doi.org/10.1063/1.2722672
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2722672

Cite this

@article{3a808e7ec6294818a7880335b6d0aed2,

title = "Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes",

abstract = "An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 Im/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting.",

author = "Lee, {Y. J.} and Lin, {P. C.} and Lu, {T. C.} and Kuo, {H. C.} and Wang, {S. C.}",

note = "Funding Information: The authors would like to thank T. C. Hsu and M. H. Hsieh of Epistar and Shawn-Yu Lin of the Rensselaer Polytechnic Institute for useful discussion and technical support. This work was supported by the MOE ATU program and in part by the National Science Council NSC 95-2120-M-009-008, NSC 95-2752-E-009-007-PAE, and NSC 95-2221-E-009-282, Republic of China.",

year = "2007",

doi = "10.1063/1.2722672",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

AU - Lee, Y. J.

AU - Lin, P. C.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

N1 - Funding Information: The authors would like to thank T. C. Hsu and M. H. Hsieh of Epistar and Shawn-Yu Lin of the Rensselaer Polytechnic Institute for useful discussion and technical support. This work was supported by the MOE ATU program and in part by the National Science Council NSC 95-2120-M-009-008, NSC 95-2752-E-009-007-PAE, and NSC 95-2221-E-009-282, Republic of China.

PY - 2007

Y1 - 2007

N2 - An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 Im/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting.

AB - An InGaN-based dual-wavelength blue/green (470 nm/550 nm) light emitting diode (LED) with three terminal operations has been designed and fabricated by using sapphire laser lift-off and wafer-bonding schemes. The device is equivalent to a parallel connection of blue and green LEDs; thus the effective electrical resistance of the device could be reduced. The luminous efficiency is 40 Im/W at 20 mA, accompanied by a broad electroluminescence emission with a combination of blue and green colors. This monolithically integrated dichromatic lighting structure has great potential in the application of the solid-state lighting.

UR - http://www.scopus.com/inward/record.url?scp=34247350015&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247350015&partnerID=8YFLogxK

U2 - 10.1063/1.2722672

DO - 10.1063/1.2722672

M3 - Article

AN - SCOPUS:34247350015

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161115

ER -

Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this