Development of composite vertical wet etching for silicon material

Mao Jung Huang, Chun Ming Chang, Nien Nan Chu, Yu Hsiang Tang, Chii Rong Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.

Original languageEnglish
Title of host publication9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages564-567
Number of pages4
ISBN (Electronic)9781479947270
DOIs
Publication statusPublished - 2014 Sep 23
Event9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, United States
Duration: 2014 Apr 132014 Apr 16

Publication series

Name9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

Other

Other9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
CountryUnited States
CityWaikiki Beach
Period2014/04/132014/04/16

Keywords

  • Bulk silicon micromachining
  • Electrochemical etching
  • Metal assisted chemical etching

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Development of composite vertical wet etching for silicon material'. Together they form a unique fingerprint.

Cite this