Abstract
In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.
| Original language | English |
|---|---|
| Title of host publication | 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 564-567 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781479947270 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
| Event | 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, United States Duration: 2014 Apr 13 → 2014 Apr 16 |
Other
| Other | 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 |
|---|---|
| Country | United States |
| City | Waikiki Beach |
| Period | 14/4/13 → 14/4/16 |
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Keywords
- Bulk silicon micromachining
- Electrochemical etching
- Metal assisted chemical etching
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
Cite this
Development of composite vertical wet etching for silicon material. / Huang, Mao Jung; Chang, Chun Ming; Chu, Nien Nan; Tang, Yu Hsiang; Yang, Chii Rong.
9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 564-567 6908875.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Development of composite vertical wet etching for silicon material
AU - Huang, Mao Jung
AU - Chang, Chun Ming
AU - Chu, Nien Nan
AU - Tang, Yu Hsiang
AU - Yang, Chii Rong
PY - 2014/1/1
Y1 - 2014/1/1
N2 - In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.
AB - In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.
KW - Bulk silicon micromachining
KW - Electrochemical etching
KW - Metal assisted chemical etching
UR - http://www.scopus.com/inward/record.url?scp=84908654168&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84908654168&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2014.6908875
DO - 10.1109/NEMS.2014.6908875
M3 - Conference contribution
AN - SCOPUS:84908654168
SP - 564
EP - 567
BT - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -