Development of composite vertical wet etching for silicon material

Mao Jung Huang; Chun Ming Chang; Nien Nan Chu; Yu Hsiang Tang; Chii Rong Yang

doi:10.1109/NEMS.2014.6908875

Development of composite vertical wet etching for silicon material

Mao Jung Huang, Chun Ming Chang, Nien Nan Chu, Yu Hsiang Tang, Chii Rong Yang

Department of Mechartronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.

Original language	English
Title of host publication	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	564-567
Number of pages	4
ISBN (Electronic)	9781479947270
DOIs	https://doi.org/10.1109/NEMS.2014.6908875
Publication status	Published - 2014 Sep 23
Event	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, United States Duration: 2014 Apr 13 → 2014 Apr 16

Publication series

Name	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

Other

Other	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Country/Territory	United States
City	Waikiki Beach
Period	2014/04/13 → 2014/04/16

Keywords

Bulk silicon micromachining
Electrochemical etching
Metal assisted chemical etching

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/NEMS.2014.6908875

Cite this

Huang, M. J., Chang, C. M., Chu, N. N., Tang, Y. H., & Yang, C. R. (2014). Development of composite vertical wet etching for silicon material. In 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 (pp. 564-567). [6908875] (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2014.6908875

Development of composite vertical wet etching for silicon material. / Huang, Mao Jung; Chang, Chun Ming; Chu, Nien Nan; Tang, Yu Hsiang; Yang, Chii Rong.

9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 564-567 6908875 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Huang, MJ, Chang, CM, Chu, NN, Tang, YH & Yang, CR 2014, Development of composite vertical wet etching for silicon material. in 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014., 6908875, 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, Institute of Electrical and Electronics Engineers Inc., pp. 564-567, 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, Waikiki Beach, United States, 2014/04/13. https://doi.org/10.1109/NEMS.2014.6908875

Huang MJ, Chang CM, Chu NN, Tang YH, Yang CR. Development of composite vertical wet etching for silicon material. In 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 564-567. 6908875. (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014). https://doi.org/10.1109/NEMS.2014.6908875

Huang, Mao Jung ; Chang, Chun Ming ; Chu, Nien Nan ; Tang, Yu Hsiang ; Yang, Chii Rong. / Development of composite vertical wet etching for silicon material. 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 564-567 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014).

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abstract = "In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.",

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N2 - In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.

AB - In this research, we combined the electrochemical etching (ECE) and the metal-assisted chemical etching (MACE) to develop a composite vertical etching process for silicon material and then discuss the etching results influenced by experimental parameters. The experimental results show that the developed composite etching process has faster etching rate than both electrochemical etching and metal-assisted chemical etching process. When a bias of 0.25 V is applied and the catalytic material is 10 nm in thickness, a 30 μm-depth vertical structure can be generated which is 3 times than the structure yield by metal-assisted chemical etching.

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Development of composite vertical wet etching for silicon material

Abstract

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Keywords

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