Abstract
The average particle sizes of nanoscale (Ba0.8Sr 0.2)(Ti0.9 Zr0.1)O3 ceramic powder (nano-BSTZ) was approximately 73nm. Polyvinylidene fluoride (PVDF)/nano-BSTZ composite films with various contents of the nano-BSTZ were screen-printed on indium tin oxide glass substrates. From the XRD patterns, PVDF was the semicrystalline type polymer. The content of the nano-BSTZ increased from 10 wt% to 50 wt%, the dielectric constants of the PVDF/nano-BSTZ films slightly decreased with increasing measured frequency. The specific capacitance values of the PVDF/nano-BSTZ composite films mixing with 50 wt% nano-BSTZ was 11.6 nF/cm2 (measured at 1 kHz). Those results suggested that the PVDF/nano-BSTZ composite films were a good candidate to develop thinner embedded capacitor devices with higher capacitance value.
| Original language | English |
|---|---|
| Title of host publication | 4th IEEE International NanoElectronics Conference, INEC 2011 |
| DOIs | |
| Publication status | Published - 2011 Sep 26 |
| Event | 4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24 |
Publication series
| Name | Proceedings - International NanoElectronics Conference, INEC |
|---|---|
| ISSN (Print) | 2159-3523 |
Other
| Other | 4th IEEE International Nanoelectronics Conference, INEC 2011 |
|---|---|
| Country | Taiwan |
| City | Tao-Yuan |
| Period | 11/6/21 → 11/6/24 |
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Keywords
- (BaSr )(TiZr)O
- embedded device
- nanoscale ceramic powder
- polyvinylidene fluoride
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Developing the properties of polyvinylidene fluoride/(Ba 0.8Sr0.2)(Ti0.9Zr0.1)O3 composite films for embedded capacitors using. / Wu, Chia Ching; Sun, Tai Ping; Hsieh, Yuan Tai; Kuo, Chin-Guo; Yang, Cheng Fu.
4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991809 (Proceedings - International NanoElectronics Conference, INEC).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Developing the properties of polyvinylidene fluoride/(Ba 0.8Sr0.2)(Ti0.9Zr0.1)O3 composite films for embedded capacitors using
AU - Wu, Chia Ching
AU - Sun, Tai Ping
AU - Hsieh, Yuan Tai
AU - Kuo, Chin-Guo
AU - Yang, Cheng Fu
PY - 2011/9/26
Y1 - 2011/9/26
N2 - The average particle sizes of nanoscale (Ba0.8Sr 0.2)(Ti0.9 Zr0.1)O3 ceramic powder (nano-BSTZ) was approximately 73nm. Polyvinylidene fluoride (PVDF)/nano-BSTZ composite films with various contents of the nano-BSTZ were screen-printed on indium tin oxide glass substrates. From the XRD patterns, PVDF was the semicrystalline type polymer. The content of the nano-BSTZ increased from 10 wt% to 50 wt%, the dielectric constants of the PVDF/nano-BSTZ films slightly decreased with increasing measured frequency. The specific capacitance values of the PVDF/nano-BSTZ composite films mixing with 50 wt% nano-BSTZ was 11.6 nF/cm2 (measured at 1 kHz). Those results suggested that the PVDF/nano-BSTZ composite films were a good candidate to develop thinner embedded capacitor devices with higher capacitance value.
AB - The average particle sizes of nanoscale (Ba0.8Sr 0.2)(Ti0.9 Zr0.1)O3 ceramic powder (nano-BSTZ) was approximately 73nm. Polyvinylidene fluoride (PVDF)/nano-BSTZ composite films with various contents of the nano-BSTZ were screen-printed on indium tin oxide glass substrates. From the XRD patterns, PVDF was the semicrystalline type polymer. The content of the nano-BSTZ increased from 10 wt% to 50 wt%, the dielectric constants of the PVDF/nano-BSTZ films slightly decreased with increasing measured frequency. The specific capacitance values of the PVDF/nano-BSTZ composite films mixing with 50 wt% nano-BSTZ was 11.6 nF/cm2 (measured at 1 kHz). Those results suggested that the PVDF/nano-BSTZ composite films were a good candidate to develop thinner embedded capacitor devices with higher capacitance value.
KW - (BaSr )(TiZr)O
KW - embedded device
KW - nanoscale ceramic powder
KW - polyvinylidene fluoride
UR - http://www.scopus.com/inward/record.url?scp=80052995309&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80052995309&partnerID=8YFLogxK
U2 - 10.1109/INEC.2011.5991809
DO - 10.1109/INEC.2011.5991809
M3 - Conference contribution
AN - SCOPUS:80052995309
SN - 9781457703799
T3 - Proceedings - International NanoElectronics Conference, INEC
BT - 4th IEEE International NanoElectronics Conference, INEC 2011
ER -