Developing the properties of polyvinylidene fluoride/(Ba 0.8Sr0.2)(Ti0.9Zr0.1)O3 composite films for embedded capacitors using

Chia Ching Wu; Tai Ping Sun; Yuan Tai Hsieh; Chin-Guo Kuo; Cheng Fu Yang

doi:10.1109/INEC.2011.5991809

Developing the properties of polyvinylidene fluoride/(Ba _0.8Sr_0.2)(Ti_0.9Zr_0.1)O₃ composite films for embedded capacitors using

Chia Ching Wu, Tai Ping Sun, Yuan Tai Hsieh, Chin-Guo Kuo, Cheng Fu Yang

Department of Industrial Education

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The average particle sizes of nanoscale (Ba_0.8Sr _0.2)(Ti_0.9 Zr_0.1)O₃ ceramic powder (nano-BSTZ) was approximately 73nm. Polyvinylidene fluoride (PVDF)/nano-BSTZ composite films with various contents of the nano-BSTZ were screen-printed on indium tin oxide glass substrates. From the XRD patterns, PVDF was the semicrystalline type polymer. The content of the nano-BSTZ increased from 10 wt% to 50 wt%, the dielectric constants of the PVDF/nano-BSTZ films slightly decreased with increasing measured frequency. The specific capacitance values of the PVDF/nano-BSTZ composite films mixing with 50 wt% nano-BSTZ was 11.6 nF/cm² (measured at 1 kHz). Those results suggested that the PVDF/nano-BSTZ composite films were a good candidate to develop thinner embedded capacitor devices with higher capacitance value.

Original language	English
Title of host publication	4th IEEE International NanoElectronics Conference, INEC 2011
DOIs	https://doi.org/10.1109/INEC.2011.5991809
Publication status	Published - 2011 Sep 26
Event	4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan Duration: 2011 Jun 21 → 2011 Jun 24

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
ISSN (Print)	2159-3523

Other

Other	4th IEEE International Nanoelectronics Conference, INEC 2011
Country	Taiwan
City	Tao-Yuan
Period	2011/06/21 → 2011/06/24

Keywords

(BaSr )(TiZr)O
embedded device
nanoscale ceramic powder
polyvinylidene fluoride

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2011.5991809

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Wu, C. C., Sun, T. P., Hsieh, Y. T., Kuo, C-G., & Yang, C. F. (2011). Developing the properties of polyvinylidene fluoride/(Ba _0.8Sr_0.2)(Ti_0.9Zr_0.1)O₃ composite films for embedded capacitors using. In 4th IEEE International NanoElectronics Conference, INEC 2011 [5991809] (Proceedings - International NanoElectronics Conference, INEC). https://doi.org/10.1109/INEC.2011.5991809

Developing the properties of polyvinylidene fluoride/(Ba _0.8Sr_0.2)(Ti_0.9Zr_0.1)O₃ composite films for embedded capacitors using. / Wu, Chia Ching; Sun, Tai Ping; Hsieh, Yuan Tai; Kuo, Chin-Guo; Yang, Cheng Fu.

4th IEEE International NanoElectronics Conference, INEC 2011. 2011. 5991809 (Proceedings - International NanoElectronics Conference, INEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wu, CC, Sun, TP, Hsieh, YT, Kuo, C-G & Yang, CF 2011, Developing the properties of polyvinylidene fluoride/(Ba _0.8Sr_0.2)(Ti_0.9Zr_0.1)O₃ composite films for embedded capacitors using. in 4th IEEE International NanoElectronics Conference, INEC 2011., 5991809, Proceedings - International NanoElectronics Conference, INEC, 4th IEEE International Nanoelectronics Conference, INEC 2011, Tao-Yuan, Taiwan, 2011/06/21. https://doi.org/10.1109/INEC.2011.5991809

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abstract = "The average particle sizes of nanoscale (Ba0.8Sr 0.2)(Ti0.9 Zr0.1)O3 ceramic powder (nano-BSTZ) was approximately 73nm. Polyvinylidene fluoride (PVDF)/nano-BSTZ composite films with various contents of the nano-BSTZ were screen-printed on indium tin oxide glass substrates. From the XRD patterns, PVDF was the semicrystalline type polymer. The content of the nano-BSTZ increased from 10 wt% to 50 wt%, the dielectric constants of the PVDF/nano-BSTZ films slightly decreased with increasing measured frequency. The specific capacitance values of the PVDF/nano-BSTZ composite films mixing with 50 wt% nano-BSTZ was 11.6 nF/cm2 (measured at 1 kHz). Those results suggested that the PVDF/nano-BSTZ composite films were a good candidate to develop thinner embedded capacitor devices with higher capacitance value.",

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author = "Wu, {Chia Ching} and Sun, {Tai Ping} and Hsieh, {Yuan Tai} and Chin-Guo Kuo and Yang, {Cheng Fu}",

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AB - The average particle sizes of nanoscale (Ba0.8Sr 0.2)(Ti0.9 Zr0.1)O3 ceramic powder (nano-BSTZ) was approximately 73nm. Polyvinylidene fluoride (PVDF)/nano-BSTZ composite films with various contents of the nano-BSTZ were screen-printed on indium tin oxide glass substrates. From the XRD patterns, PVDF was the semicrystalline type polymer. The content of the nano-BSTZ increased from 10 wt% to 50 wt%, the dielectric constants of the PVDF/nano-BSTZ films slightly decreased with increasing measured frequency. The specific capacitance values of the PVDF/nano-BSTZ composite films mixing with 50 wt% nano-BSTZ was 11.6 nF/cm2 (measured at 1 kHz). Those results suggested that the PVDF/nano-BSTZ composite films were a good candidate to develop thinner embedded capacitor devices with higher capacitance value.

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