Determination of junction temperature in InGaN and AlGaInP light-emitting diodes

Ya Ju Lee, Chia Jung Lee, Chih Hao Chen

Research output: Contribution to journalArticle

20 Citations (Scopus)


The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.

Original languageEnglish
Pages (from-to)1450-1455
Number of pages6
JournalIEEE Journal of Quantum Electronics
Issue number10
Publication statusPublished - 2010 Sep 17



  • Junction temperature
  • Light-emitting diode (LED)
  • Thermal resistance

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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