Determination of junction temperature in InGaN and AlGaInP light-emitting diodes

Ya Ju Lee, Chia Jung Lee, Chih Hao Chen

    Research output: Contribution to journalArticlepeer-review

    20 Citations (Scopus)

    Abstract

    The junction temperature of a light-emitting diode (LED) directly and greatly affects its performances. Therefore, the reliable measurement and accurate estimation of the junction temperature of an LED is extremely important. This paper proposes an approach for directly determining the dependence of junction temperature on injected currents in InGaN and AlGaInP LEDs. Various important physical parameters that affect the junction temperature of an LED are also considered.

    Original languageEnglish
    Pages (from-to)1450-1455
    Number of pages6
    JournalIEEE Journal of Quantum Electronics
    Volume46
    Issue number10
    DOIs
    Publication statusPublished - 2010 Sep 17

    Keywords

    • Junction temperature
    • Light-emitting diode (LED)
    • Thermal resistance

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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