Design of ESD protection diodes with embedded scr for differential LNA in a 65-nm CMOS Process

Chun-Yu Lin, Mei Lian Fan

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The pin-to-pin electrostatic discharge (ESD) issue for a differential low-noise amplifier (LNA) was studied in this work. A new design of ESD protection diodes with an embedded silicon-controlled rectifier (SCR) was proposed to protect the gigahertz differential LNA. The proposed ESD protection design was modified from the conventional ESD protection design without adding any extra device. The SCR path was established directly from one differential input pad to the other differential input pad so the pin-to-pin ESD robustness can be improved. This design had been verified in a 65-nm CMOS process. Besides, this design had been further applied to a 24-GHz LNA in the same 65-nm CMOS process. Experimental results had shown that the proposed ESD protection design for the differential LNA can achieve excellent ESD robustness and good RF performances.

Original languageEnglish
Article number6906306
Pages (from-to)2723-2732
Number of pages10
JournalIEEE Transactions on Microwave Theory and Techniques
Volume62
Issue number11
DOIs
Publication statusPublished - 2014 Nov 1

Fingerprint

Differential amplifiers
Electrostatic discharge
Low noise amplifiers
low noise
CMOS
Diodes
amplifiers
diodes
electrostatics
silicon controlled rectifiers
Thyristors

Keywords

  • Differential low-noise amplifier (LNA)
  • RF
  • diode
  • electrostatic discharge (ESD)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Design of ESD protection diodes with embedded scr for differential LNA in a 65-nm CMOS Process. / Lin, Chun-Yu; Fan, Mei Lian.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 62, No. 11, 6906306, 01.11.2014, p. 2723-2732.

Research output: Contribution to journalArticle

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