Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process

Chun Yu Lin; Rong Kun Chang

doi:10.1109/TED.2015.2450225

Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process

Chun Yu Lin, Rong Kun Chang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

An inductor-assisted silicon-controlled rectifier (LASCR) device is proposed to protect the gigahertz ICs in nanoscale CMOS technologies from electrostatic discharge (ESD) damages. The LASCR with the assistance of inductor can provide the bidirectional ESD current paths and fine-tune the high-frequency performances. Each LASCR test device has been implemented in a compact size of ∼ 100× 100~μ m². The LASCR test devices have been successfully verified in a silicon chip to achieve 4-7.5 kV human-body-model ESD robustness with 1-3-dB loss in K/Ka-band (18-40 GHz). With the better performances, the proposed ESD protection device is very suitable for K/Ka-band applications.

Original language	English
Article number	7163314
Pages (from-to)	2824-2829
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	9
DOIs	https://doi.org/10.1109/TED.2015.2450225
Publication status	Published - 2015 Sept 1

Keywords

CMOS
K-band
Ka-band
electrostatic discharge (ESD)
silicon-controlled rectifier (SCR).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2015.2450225

Cite this

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title = "Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process",

abstract = "An inductor-assisted silicon-controlled rectifier (LASCR) device is proposed to protect the gigahertz ICs in nanoscale CMOS technologies from electrostatic discharge (ESD) damages. The LASCR with the assistance of inductor can provide the bidirectional ESD current paths and fine-tune the high-frequency performances. Each LASCR test device has been implemented in a compact size of ∼ 100× 100~μ m2. The LASCR test devices have been successfully verified in a silicon chip to achieve 4-7.5 kV human-body-model ESD robustness with 1-3-dB loss in K/Ka-band (18-40 GHz). With the better performances, the proposed ESD protection device is very suitable for K/Ka-band applications.",

keywords = "CMOS, K-band, Ka-band, electrostatic discharge (ESD), silicon-controlled rectifier (SCR).",

author = "Lin, {Chun Yu} and Chang, {Rong Kun}",

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AU - Lin, Chun Yu

AU - Chang, Rong Kun

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N2 - An inductor-assisted silicon-controlled rectifier (LASCR) device is proposed to protect the gigahertz ICs in nanoscale CMOS technologies from electrostatic discharge (ESD) damages. The LASCR with the assistance of inductor can provide the bidirectional ESD current paths and fine-tune the high-frequency performances. Each LASCR test device has been implemented in a compact size of ∼ 100× 100~μ m2. The LASCR test devices have been successfully verified in a silicon chip to achieve 4-7.5 kV human-body-model ESD robustness with 1-3-dB loss in K/Ka-band (18-40 GHz). With the better performances, the proposed ESD protection device is very suitable for K/Ka-band applications.

AB - An inductor-assisted silicon-controlled rectifier (LASCR) device is proposed to protect the gigahertz ICs in nanoscale CMOS technologies from electrostatic discharge (ESD) damages. The LASCR with the assistance of inductor can provide the bidirectional ESD current paths and fine-tune the high-frequency performances. Each LASCR test device has been implemented in a compact size of ∼ 100× 100~μ m2. The LASCR test devices have been successfully verified in a silicon chip to achieve 4-7.5 kV human-body-model ESD robustness with 1-3-dB loss in K/Ka-band (18-40 GHz). With the better performances, the proposed ESD protection device is very suitable for K/Ka-band applications.

KW - CMOS

KW - K-band

KW - Ka-band

KW - electrostatic discharge (ESD)

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Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process

Abstract

Keywords

ASJC Scopus subject areas

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