Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process

Chun-Yu Lin, Rong Kun Chang

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

An inductor-assisted silicon-controlled rectifier (LASCR) device is proposed to protect the gigahertz ICs in nanoscale CMOS technologies from electrostatic discharge (ESD) damages. The LASCR with the assistance of inductor can provide the bidirectional ESD current paths and fine-tune the high-frequency performances. Each LASCR test device has been implemented in a compact size of ∼ 100× 100~μ m2. The LASCR test devices have been successfully verified in a silicon chip to achieve 4-7.5 kV human-body-model ESD robustness with 1-3-dB loss in K/Ka-band (18-40 GHz). With the better performances, the proposed ESD protection device is very suitable for K/Ka-band applications.

Original languageEnglish
Article number7163314
Pages (from-to)2824-2829
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume62
Issue number9
DOIs
Publication statusPublished - 2015 Sep 1

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Electrostatic discharge
Silicon
Thyristors

Keywords

  • CMOS
  • K-band
  • Ka-band
  • electrostatic discharge (ESD)
  • silicon-controlled rectifier (SCR).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Design of ESD Protection Device for K/Ka-Band Applications in Nanoscale CMOS Process. / Lin, Chun-Yu; Chang, Rong Kun.

In: IEEE Transactions on Electron Devices, Vol. 62, No. 9, 7163314, 01.09.2015, p. 2824-2829.

Research output: Contribution to journalArticle

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