Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process

  • Li Wei Chu*
  • , Chun Yu Lin
  • , Shiang Yu Tsai
  • , Ming Dou Ker
  • , Ming Hsiang Song
  • , Chewn Pu Jou
  • , Tse Hua Lu
  • , Jen Chou Tseng
  • , Ming Hsien Tsai
  • , Tsun Lai Hsu
  • , Ping Fang Hung
  • , Tzu Heng Chang
  • , Yu Lin Wei
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An ESD protection cell consisted of a diode, a silicon-controlled rectifier SCR a PMOS, and inductors was proposed for dual-band radio-frequency RFESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.

Original languageEnglish
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012
Publication statusPublished - 2012
Externally publishedYes
Event34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012 - Tucson, AZ, United States
Duration: 2012 Sept 92012 Sept 14

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Other

Other34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012
Country/TerritoryUnited States
CityTucson, AZ
Period2012/09/092012/09/14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process'. Together they form a unique fingerprint.

Cite this