Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process

Li Wei Chu; Chun Yu Lin; Shiang Yu Tsai; Ming Dou Ker; Ming Hsiang Song; Chewn Pu Jou; Tse Hua Lu; Jen Chou Tseng; Ming Hsien Tsai; Tsun Lai Hsu; Ping Fang Hung; Tzu Heng Chang; Yu Lin Wei

Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process

Li Wei Chu^*, Chun Yu Lin, Shiang Yu Tsai, Ming Dou Ker, Ming Hsiang Song, Chewn Pu Jou, Tse Hua Lu, Jen Chou Tseng, Ming Hsien Tsai, Tsun Lai Hsu, Ping Fang Hung, Tzu Heng Chang, Yu Lin Wei

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An ESD protection cell consisted of a diode, a silicon-controlled rectifier SCR a PMOS, and inductors was proposed for dual-band radio-frequency RFESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.

Original language	English
Title of host publication	Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012
Publication status	Published - 2012
Externally published	Yes
Event	34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012 - Tucson, AZ, United States Duration: 2012 Sept 9 → 2012 Sept 14

Publication series

Name	Electrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)	0739-5159

Other

Other	34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012
Country/Territory	United States
City	Tucson, AZ
Period	2012/09/09 → 2012/09/14

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Chu, L. W., Lin, C. Y., Tsai, S. Y., Ker, M. D., Song, M. H., Jou, C. P., Lu, T. H., Tseng, J. C., Tsai, M. H., Hsu, T. L., Hung, P. F., Chang, T. H., & Wei, Y. L. (2012). Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process. In Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012 Article 6333325 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process. / Chu, Li Wei; Lin, Chun Yu; Tsai, Shiang Yu et al.
Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012. 2012. 6333325 (Electrical Overstress/Electrostatic Discharge Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chu, LW, Lin, CY, Tsai, SY, Ker, MD, Song, MH, Jou, CP, Lu, TH, Tseng, JC, Tsai, MH, Hsu, TL, Hung, PF, Chang, TH & Wei, YL 2012, Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process. in Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012., 6333325, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012, Tucson, AZ, United States, 2012/09/09.

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title = "Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process",

abstract = "An ESD protection cell consisted of a diode, a silicon-controlled rectifier SCR a PMOS, and inductors was proposed for dual-band radio-frequency RFESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.",

author = "Chu, {Li Wei} and Lin, {Chun Yu} and Tsai, {Shiang Yu} and Ker, {Ming Dou} and Song, {Ming Hsiang} and Jou, {Chewn Pu} and Lu, {Tse Hua} and Tseng, {Jen Chou} and Tsai, {Ming Hsien} and Hsu, {Tsun Lai} and Hung, {Ping Fang} and Chang, {Tzu Heng} and Wei, {Yu Lin}",

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AU - Ker, Ming Dou

AU - Song, Ming Hsiang

AU - Jou, Chewn Pu

AU - Lu, Tse Hua

AU - Tseng, Jen Chou

AU - Tsai, Ming Hsien

AU - Hsu, Tsun Lai

AU - Hung, Ping Fang

AU - Chang, Tzu Heng

AU - Wei, Yu Lin

PY - 2012

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AB - An ESD protection cell consisted of a diode, a silicon-controlled rectifier SCR a PMOS, and inductors was proposed for dual-band radio-frequency RFESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.

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AN - SCOPUS:84869836203

SN - 1585372188

SN - 9781585372188

T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings

BT - Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012

T2 - 34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012

Y2 - 9 September 2012 through 14 September 2012

ER -

Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process

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