Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology

Chun Yu Lin; Yan Lian Chiu

doi:10.1016/j.sse.2016.07.029

Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology

Chun Yu Lin^*, Yan Lian Chiu

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × V_DD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with V_DD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × V_DD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × V_DD-tolerant stacked-device output driver to improve its ESD robustness.

Original language	English
Pages (from-to)	28-34
Number of pages	7
Journal	Solid-State Electronics
Volume	124
DOIs	https://doi.org/10.1016/j.sse.2016.07.029
Publication status	Published - 2016 Oct 1

Keywords

Electrostatic discharge (ESD)
Output driver
Silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2016.07.029

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title = "Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology",

abstract = "This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.",

keywords = "Electrostatic discharge (ESD), Output driver, Silicon-controlled rectifier (SCR)",

author = "Lin, {Chun Yu} and Chiu, {Yan Lian}",

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doi = "10.1016/j.sse.2016.07.029",

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journal = "Solid-State Electronics",

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T1 - Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology

AU - Lin, Chun Yu

AU - Chiu, Yan Lian

PY - 2016/10/1

Y1 - 2016/10/1

N2 - This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.

AB - This study proposes a novel design for an embedded silicon-controlled rectifier (SCR) device to improve the electrostatic discharge (ESD) robustness of a stacked-device output driver. A 3 × VDD-tolerant stacked-device output driver with embedded SCR is demonstrated using a 0.18 μm CMOS process with VDD of 3.3 V. This design is verified in a silicon chip, and it is shown that the proposed output driver with embedded SCR can deliver an output voltage of 3 × VDD. The ESD robustness can be improved without the use of any additional ESD protection device or layout area. Furthermore, the proposed design can also be used for an n × VDD-tolerant stacked-device output driver to improve its ESD robustness.

KW - Electrostatic discharge (ESD)

KW - Output driver

KW - Silicon-controlled rectifier (SCR)

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Design of embedded SCR device to improve ESD robustness of stacked-device output driver in low-voltage CMOS technology

Abstract

Keywords

ASJC Scopus subject areas

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